Browsing by Author "Chen, Szu-Yuan"
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Item type:Item, Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices(2007) ;Chang, Tzu-Yueh ;Chen, Szu-Yuan ;Lee, Po-Tsung ;光電工程學系Department of PhotonicsWe, investigate organic dynamic random access bistable devices with A1/Alq(3)/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.Item type:Item, Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq(3) thin film(2008-10-01) ;Lee, Po-Tsung ;Chang, Tzu-Yueh ;Chen, Szu-Yuan ;光電工程學系顯示科技研究所Organic bistable devices with an Al/Alq(3)/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current-voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq(3)/n-type Si structure is primarily caused by the interface defects at the Al/Alq(3) junction. Moreover, the electrical properties of these devices can be modified and controlled by utilizing the appropriate deposition rates of the Alq(3) thin film by thermal deposition. XPS, AFM, and GIXRD measurements are performed to characterize the properties of Alq(3) thin film and Alq(3)/Al interface. This type of devices involves an extremely simple fabrication process and offers great potential in future advanced organic electronics. (C) 2008 Elsevier B.V. All rights reserved.