Browsing by Author "Chen, TP"

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A novel Si-B diffusion source for p(+)-poly-Si gate
(1999-10-01)
Chao, TS
;
Kuo, CP
;
Chen, TP
;
Lei, TF
;
電子工程學系及電子研究所
In this paper, we report a novel Si-B diffusion source for p(+)-polySi gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can br effectively suppressed using this process. All the electrical properties of the MOS capacitors are significantly improved over the conventional BF2+ or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs. (C) 1999 The Electrochemical Society. S0013-4651(99)03-017-7. All rights reserved.
Suppression of boron penetration in p(+) polysilicon gate using Si-B diffusion source
(1998-01-08)
Chao, TS
;
Kuo, CP
;
Lei, TF
;
Chen, TP
;
Huang, TY
The authors report a novel Si-B diffusion source for doping p(+)-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. AU of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.