Browsing by Author "Chen, Tzu-Shan"
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Item type:Item, Photonic Crystal Surface Emitting Lasers with InAs/InGaAs/GaAs Quantum Dots(2017-01-01) ;Chen, Tzu-Shan ;Lee, Zong-Lin ;Hsu, Ming-Yang ;Lin, GrayLin, Sheng-DiInAs/InGaAs/GaAs quantum-dot (QD) photonic crystal (PC) surface emitting lasers were fabricated and room-temperature lasing emissions were demonstrated by optical pumping for the first time. The etch depth of PC holes is the critical parameter for adjacent diffraction coupling between PC structure and QD gain media.Item type:Item, Photonic Crystal Surface Emitting Lasers With Quantum Dot Active Region(2017-10-15) ;Chen, Tzu-Shan ;Li, Zong-Lin ;Hsu, Ming-Yang ;Lin, GrayLin, Sheng-DiGaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 mu m wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.