Browsing by Author "Chen, Uei-Shin"

Now showing 1 - 3 of 3

Cobalt Silicide Nanostructures: Synthesis, Electron Transport, and Field Emission Properties
(2009-10-01)
Tsai, Chun-I
;
Yeh, Ping-Hung
;
Wang, Chiu-Yen
;
Wu, Han-Wei
;
Chen, Uei-Shin
Cobalt silicide nanostructures have been synthesized by a spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. The effects of two main parameters on the growth of nanostructures were discussed. The phases formed were determined by the Gibbs free energy changes in the reactions. Various phases (CoSi, Co(2)Si) and morphologies, such as single-stern nanowires, three-dimensional (3D) nanowire networks, and aloelike nanostructures, have been synthesized. Very low turn-on field (1.42 V/mu m) and good conductance obtained from field-emission and electrical property measurements, respectively, indicate that CoSi nanowires are potentially useful for electronic devices.
Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
(2007-11-26)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Yeh, Jui-Lung
;
Sze, Simon M.
;
Chang, Chun-Yen
This study reveals the formation of nickel-oxygen-silicon nanoparticles with nonvolatile memory effect by sputtering a commixed target in argon and oxygen ambiance. A transmission electron microscope clearly shows the embedded nanoparticles in the silicon oxide and the constituent was examined by x-ray photoelectron spectroscopy. The capacitor structure with embedded nickel-oxygen-silicon nanoparticles was also studied and it exhibited hysteresis characteristics after electrical operation. The memory window and retention of nickel-oxygen-silicon nanoparticles were enough to apply on nonvolatile memory. In addition, a physical mechanism was deduced to expound the role of oxygen in the formation of nickel-oxygen-silicon nanoparticles. (C) 2007 American Institute of Physics.
Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices
(2011-11-01)
Chen, Sheng-Yu
;
Yeh, Ping-Hung
;
Wu, Wen-Wei
;
Chen, Uei-Shin
;
Chueh, Yu-Lun
One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NISI has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi(2), which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects.