Browsing by Author "Chen, W. -C."

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A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices
(2020-06-01)
Lin, C. -Y.
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Chen, P. -H.
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Chang, T. -C.
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Huang, W. -C.
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Tan, Y. -F.
In this research, we investigated the conduction mechanism in metal-insulator transition (MIT) materials. Among these MIT materials (NbOx, NiOx, VOx, and TaS2), vanadium oxide-based selectors have been widely investigated because of their high switching speed (similar to 10-ns transition time), sufficient nonlinearity (>10(3)), and endurance stability (similar to 10(10)). Abnormal temperature-dependent degradation in the high resistive state was observed, as was studied in detail by a current fitting analysis and explored theoretically by electric (E-MIT) and thermal (T-MIT) modeling. The results suggest the existence of a MIT region located between the electrode and the localized filament. To improve the localized transition efficiency, we propose an enhanced-type MIT architecture to bypass the E-MIT and T-MIT universal rule with the novel structure of vanadium top electrode device. As compared with a vanadium oxide middle-layer device, the electrical transition efficiency is improved 2-fold as evidenced by thermal cycling material analysis, as well as boosting endurance reliability to 10(7) at 65 degrees C. Finally, for the first time, a potential neuromorphic computing application featuring a damping oscillator has been demonstrated in this enhanced-type MIT architecture, with a high damping ratio with 10-fold smaller area and 5-fold smaller energy than complementary metal-oxide-semiconductor (CMOS) devices. This presents a promising milestone for ultralow power neuromorphic system design and solutions in the near future. (C) 2020 Elsevier Ltd. All rights reserved.
Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure
(2010-06-01)
Ortiz-Conde, A.
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Rey, A. D. Latorre
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Liu, W.
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Chen, W. -C.
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Lin, H. -C.
A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented. (C) 2010 Elsevier Ltd. All rights reserved.