Browsing by Author "Chen, W. J."

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A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
(2007-10-01)
Yang, H. J.
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Chin, Albert
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Chen, W. J.
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Cheng, C. F.
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Huang, W. L.
We describe a programmable-erasable MIS capacitor with a single high-kappa Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of similar to 6.6 fF/mu m(2), low program and erase voltages of +5 and -5 V, respectively, and a large Delta V-fb memory window of 1.5 V. In addition, the 25 degrees C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.
Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy
(2009-11-01)
Wang, J. S.
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Yang, C. S.
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Chen, P. I.
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Su, C. F.
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Chen, W. J.
This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/A mu m with a field enhancement factor beta of around 793.
High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
(2008-08-01)
Cheng, C. H.
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Lin, S. H.
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Jhou, K. Y.
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Chen, W. J.
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Chou, C. P.
We report Ir/TiO(2)/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO(2), a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.
High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
(2006)
Wu, C. H.
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Hung, B. F.
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Chin, Albert
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Wang, S. J.
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Chen, W. J.
We report novel 1000 degrees C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good phi(m.eff) of 5.08 and 4.24 eV, low V, of -0.10 and 0.18 V, high mobility of 84 and 217 cm(2)/Vs at 1.6 nm EOT, and small 850 degrees C BTI < 20 mV (10 MV/cm for 1 hr) are measured.
RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density
(2006-09-01)
Huang, C. C.
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Chiang, K. C.
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Kao, H. L.
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Chin, Albert
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Chen, W. J.
A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications
(2012-10-01)
Yang, C. L.
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Tsai, C. H.
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Li, C. I.
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Tzeng, C. Y.
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Lin, G. P.
In this letter, we have demonstrated that cryogenic implant in the source and drain formation offers advantages for reducing the threshold voltage mismatch in pMOSFET. A discrete dopant profiling method is used to verify the presence of boron out-diffusion from the drain, which further induces the random dopant fluctuation. Results show that this boron out-diffusion can be greatly reduced in this new process. Two major factors in improving the device variability by cryogenic implant are discussed, i.e., the polysilicon grain size control and the embedded-SiGe dislocation defect reduction during source and drain formation.
Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications
(2007)
Chiang, K. C.
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Lin, J. W.
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Pan, H. C.
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Hsiao, C. N.
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Chen, W. J.
We demonstrate a high-performance TaN/SrTiO3/TaN metal-insulator- metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fF/mu m(2), small voltage linearity alpha of 54 ppm/V-2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits. (c) 2007 The Electrochemical Society.