Browsing by Author "Chen, WD"

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Applying Kalman filter on solving simultaneous equations with overidentifying rank restrictions: The analysis of the demand and supply model of medium-size scooter market in Taiwan
(1997-01-01)
Yang, CA
;
Chen, WD
;
交大名義發表
;
管理科學系
;
National Chiao Tung University
Once the structure form of demand and supply is translated into a reduced form, one can solve the reduced form with a state space model of the Kalman filter method. This paper discusses an innovation representation that links the structure form with the state space model. For the state space model, the recursive Expectation Maximization (EM) algorithm is used to estimate the parameters of a structure form. This research successfully applied the Kalman filter method to the estimation of the coefficients of simultaneous equations with overidentifying rank restrictions. The empirical monthly data set came from the medium-size scooter market in Taiwan during 1987 to 1992 period.
Applying Kalman filter on solving simultaneous equations with overidentifying rank restrictions: The analysis of the demand and supply model of medium-size scooter market in Taiwan
(1997-01-01)
Yang, CA
;
Chen, WD
;
管理科學系
;
Department of Management Science
Once the structure form of demand and supply is translated into a reduced form, one can solve the reduced form with a state space model of the Kalman filter method. This paper discusses an innovation representation that links the structure form with the state space model. For the state space model, the recursive Expectation Maximization (EM) algorithm is used to estimate the parameters of a structure form. This research successfully applied the Kalman filter method to the estimation of the coefficients of simultaneous equations with overidentifying rank restrictions. The empirical monthly data set came from the medium-size scooter market in Taiwan during 1987 to 1992 period.
The enhancement of nitrogen incorporation in RTN2O annealed TEOS oxide fabricated on disilane-based polysilicon films
(2001-08-01)
Lee, JW
;
Chen, WD
;
Lei, TF
;
Lee, CL
;
電子工程學系及電子研究所
Disilane-based stacked structures were first proposed to demonstrate that the nitrogen incorporation was enhanced in the RTN2O annealed tetraethylorthosilicate (TEOS) oxide fabricated on disilane-based polysilicon films. Compared with the oxide fabricated on the silane-based polysilicon film, the nitrogen incorporation in the disilane-based oxides is six times higher. To study the nitrogen incorporation effects on the RTN2O annealed TEOS oxides, the disilane-based polysilicon stacked on the silane-based polysilicon film structure was proposed. We found that the oxide quality was largely improved by the same surface morphology of bottom polysilicon films. We think the this approach could be used in fabricating dynamic random access memory (DRAM) to have better data retention characteristics and to improve the reliability of DRAM and flash memory devices. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1383554] All rights reserved.