Browsing by Author "Chen, WR"

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Enhanced performance of poly-Si thin film transistors using fluorine ions implantation
(2005)
Tu, CH
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Chang, TC
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Liu, PT
;
Zan, HW
;
Tai, YH
Fluorine (F)-implanted polycrystalline silicon thin-film transistor (poly-Si TFT) are proposed for the enhancement of device performance. A significant improvement in electrical characteristics, such as I-ON/I-OFF ratio, and field effect mobility, can be realized in the new thin-film transistor. The field effect mobility for F-implanted poly-Si TFTs is 53.82 cm(2)/V-s, and higher than 19.74 cm(2)/V-s in conventional SPC poly-Si TFTs. Furthermore, the F-implanted poly- Si TFT exhibits high immunity against hot carrier effect and improved electrical reliability. The manufacturing processes are simple and without additional thermal annealing steps, thereby compatible with the conventional TFT fabrication processes. (c) 2005 The Electrochemical Society. All rights reserved.
Equivalence of the 1-rate model to the classical model on strictly nonblocking switching networks
(2004)
Chen, WR
;
Hwang, FK
;
Zhu, XD
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應用數學系
;
Department of Applied Mathematics
In the 1-rate(f) network, each link can carry up to f messages for some integer f. The classical model is the special case when f = 1. We show that a network is strictly nonblocking under the 1-rate(f) model if and only if it is strictly nonblocking under the classical model.
Formation of silicon germanium nitride layer with distributed charge storage elements
(2006-03-13)
Tu, CH
;
Chang, TC
;
Liu, PT
;
Liu, HC
;
Chen, WR
The formation of silicon germanium nitride (SiGeN) with distributed charge storage elements is proposed in this work. A large memory window is observed due to the retainable dangling bonds inside the SiGeN gate stack layer. The nonvolatile memory device with the high-temperature oxidized SiGeN stack layer exhibits 2 V threshold voltage shift under 7 V write operation, which is sufficient for a memory device to define the signal "0" and "1." Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 American Institute of Physics.
Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC
(2006-04-01)
Tu, CH
;
Chang, TC
;
Liu, PT
;
Yang, CY
;
Liu, HC
The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.