Browsing by Author "Chen, Wei-Yen"

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Characterization of Silicon Photonics Modulator Integration and High Efficiency Testing Platform
(2019-01-01)
Chen, Shang-Chun
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Wun, Sin-Jhu
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Hsu, Chih-Hsiang
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Lin, Chen-Yu
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Zhang, Jie
We successfully establish a silicon photonics device manufacturing and testing platform in 200mm SOI wafer. We integrate modulator and driver chip to show 30Gbis PAM4 capability. A fully-automatic wafer level characterization process is built up for all optical devices in surface coupling method.
Heterogeneous nuclear ribonucleoprotein M associates with mTORC2 and regulates muscle differentiation
(2017-01-20)
Chen, Wei-Yen
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Lin, Chia-Lung
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Chuang, Jen-Hua
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Chiu, Fu-Yu
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Sun, Yun-Ya
Mammalian target of rapamycin (mTOR) plays a range of crucial roles in cell survival, growth, proliferation, metabolism, and morphology. However, mTOR forms two distinct complexes, mTOR complex 1 and mTOR complex 2 (mTORC1 and mTORC2), via association with a series of different components; this allows the complexes to execute their wide range of functions. This study explores further the composition of the mTORC2 complex. Utilizing Rictor knock-out cells, immunoprecipitation and mass spectrometry, a novel Rictor associated protein, heterogeneous nuclear ribonucleoprotein M (hnRNP M), was identified. The association between hnRNP M and Rictor was verified using recombinant and endogenous protein and the binding site was found to be within aa 1 similar to 532 of hnRNP M. The presence of hnRNP M significantly affects phosphorylation of SGK1 S422, but not of Akt S473, PKC alpha S657 and PKC zeta T560. Furthermore, hnRNP M also plays a critical role in muscle differentiation because knock-down of either hnRNP M or Rictor in C2C12 myoblasts reduced differentiation. This decrease is able to be rescued by overexpression SGK S422D in hnRNP M knockdown C2C12 myoblasts. Taken together, we have identified a novel Rictor/mTOR binding molecule, hnRNP M, that allows mTORC2 signaling to phosphorylate SGK1 thus regulating muscle differentiation.
Nitride Induced Stress Affecting Crystallinity of Sidewall Damascene Gate-All-Around Nanowire Poly-Si FETs
(2020-01-01)
Shen, Chuan-Hui
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Chen, Wei-Yen
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Lee, Shen-Yang
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Ku, Po-Yi
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Chao, Tien-Sheng
In this article, poly-Si gate-all-around (GAA) field effect transistors (FETs) using sidewall damascene method are successfully demonstrated. By manipulating the stress which is imposed by nitride layer, the crystallinity of poly-Si channels can be modified easily by changing the thickness of nitride layer. The better crystallinity of the devices with 60 & x00A0;nm top nitride is attributed to larger average grain size and fewer defects, leading to higher field-effect carrier mobility compared to 40 and 80 & x00A0;nm top nitride layer devices. Both n-type and p-type devices exhibit superior electrical characteristics including higher on-state current of 40 & x00A0;& x03BC;A & x002F;& x03BC;m (n-type) and 26 & x00A0;& x03BC;A & x002F;& x03BC;m (p-type), steep subthreshold swing of 82 & x00A0;mV & x002F;dec. (n-type) and 104 & x00A0;mV & x002F;dec. (p-type), an extremely low drain-induced barrier lowering (DIBL) of 4.6 & x00A0;mV & x002F;V (n-type) and 16.6 & x00A0;mV & x002F;V (p-type), and high I_on& x002F;I_off current ratio larger than seven orders of magnitude. The thermal stability and gate stress reliability measurement of sidewall damascene GAA nanowire poly-Si devices were also investigated. With better crystallinity, electrical characteristics of GAA nanowire poly-Si devices degrade less under same elevated temperature condition. Devices characteristics remain unchanged after long gate stress time. This simple fabrication process makes it a potential candidate for future three-dimensional integrated-circuit (3D-IC) and low-cost Internet of Things (IoTs) applications.