Browsing by Author "Chen, Wen-Lin"

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Characterization of Annular-Structure RF LDMOS Transistors Using Polyharmonic Distortion Model
(2009)
Chiu, Chia-Sung
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Chen, Kun-Ming
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Huang, Guo-Wei
;
Hsiao, Chih-Hua
;
Liao, Kuo-Hsiang
An annular-structure lateral-diffused metal-oxide semiconductor (LDMOS) RF transistor with polyharmonic distortion (PHD) model characterized by nonlinear vector network analyzer is described in this paper. The devices were fabricated using a 0.5 mu m LDMOS process. The DC, small-signal, and large-signal characteristics of RF LDMOS transistors with annular-structures were also studied in this work. Using the PHD model, the accuracy of intermodulation and time waveform is verified. Furthermore, the model via X-parameter shows good agreement without optimization.
Evaluating aesthetics for user-sketched layouts of symmetric graphs
(2018-10-01)
Lin, Chun-Cheng
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Huang, Weidong
;
Liu, Wan-Yu
;
Chen, Wen-Lin
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工業工程與管理學系
In evaluating aesthetics of graph drawings, recent works have provided participants with an adjacency list of a graph and asked them to sketch a pleasing layout of the graph. However, this line of research has not considered aesthetics for user-sketched layouts of graphs with symmetries, which are an important property of a given graph drawing. Therefore, the work reported in this paper focuses on empirically evaluating aesthetics for user-sketched layouts of symmetric graphs. We provided participants adjacency lists of two symmetric graphs and asked them to sketch the two graphs. We analyzed whether symmetries were shown in user-sketched drawings, and further analyzed the aesthetics based on their drawing processes and drawing preferences. In addition, our experiment includes multiple stages to analyze whether the participants had the potential learning ability to draw symmetric structures of graphs. We found that in drawing symmetrical graphs, showing symmetry was likely considered more important than minimizing edge crossings, and that most participants made substantial progress in their ability to create symmetric drawings after going through the experimental stages.
Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal-Oxide-Semiconductor Amplifiers
(2009-04-01)
Chiu, Chia-Sung
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Chang, Ching-Chun
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Ku, Chia-Lin
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Peng, Kang-Ming
;
Jeng, Erik S.
A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 mu m process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70 mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications. (C) 2009 The Japan Society of Applied Physics
Temperature Effect on Ku-Band Current-Reused Common-Gate LNA in 0.13-mu m CMOS Technology
(2009-09-01)
Chen, Wen-Lin
;
Chang, Sheng-Fuh
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Chen, Kun-Ming
;
Huang, Guo-Wei
;
Chang, Jen-Chung
This paper presents the temperature effect on a Ku-band NMOS common-gate low-noise amplifier (CG-LNA). The temperature characteristics of an NMOS transistor and spiral inductors are obtained over the temperature range from 253 to 393 K. These results show that the optimal bias condition minimizes the transconductance and drain current temperature variations. Based on these results, a current-reused CG-LNA with good temperature performance is designed. At ambient temperatures, the CG-LNA has a measured power gain of 10.3 dB and a noise figure (NF) of 4.3 dB at 15.2 GHz, while consuming 4.5 mA from a 1.3-V power supply. When the temperature varies from 253 to 393 K, the CG-LNA has a power gain variation of 3 dB, NF variation of 2 dB, and dc power consumption variation of 11.9%. This paper is the first to report the temperature effect on Ku-band CG-LNAs.