Browsing by Author "Chen, Yan-Sheng"

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N-Channel Zinc Oxide Nanowire: Perylene Diimide Blend Organic Thin Film Transistors
(2017-09-01)
Chen, Shin-Pin
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Chen, Yan-Sheng
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Hsieh, Gen-Wen
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照明與能源光電研究所
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影像與生醫光電研究所
N-channel solution-processed organic thin film transistors (TFTs) based on a blend network of N,N`-bis(1H,1H-perfluorobutyl)-1,7-dicyanoperylene-3,4: 9,10-tetracarboxylic diimide (PDIF-CN2) and zinc oxide (ZnO) nanowires show remarkable electron field effect mobilities of up to 0.5 cm(2)/ V.s in ambient air, which is about five-fold higher than those based on pristine PDIF-CN2 films. When tested in both bias directions the output and transfer electrical hysteresis of those blend TFTs are negligible. In addition, their low processing temperature and flexible semiconducting layer makes them a highly promising means of realizing high performance, solution-processed n-channel organic TFTs.
Zinc Oxide Nanowire-Poly(Methyl Methacrylate) Dielectric Layers for Polymer Capacitive Pressure Sensors
(2015-01-14)
Chen, Yan-Sheng
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Hsieh, Gen-Wen
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Chen, Shih-Ping
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Tseng, Pin-Yen
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Wang, Cheng-Wei
Polymer capacitive pressure sensors based on a dielectric composite layer of zinc oxide nanowire and poly(methyl methacrylate) show pressure sensitivity in the range of 2.63 x 10(-3) to 9.95 x 10(-3) cm(2) gf(-1). This represents an increase of capacitance change by as much as a factor of 23 over pristine polymer devices. An ultralight load of only 10 mg (corresponding to an applied pressure of similar to 0.01 gf cm(-2)) can be clearly recognized, demonstrating remarkable characteristics of these nanowire-polymer capacitive pressure sensors. In addition, optical transmittance of the dielectric composite layer is approximately 90% in the visible wavelength region. Their low processing temperature, transparency, and flexible dielectric film makes them a highly promising means for flexible touching and pressure-sensing applications.