Browsing by Author "Chen, Yan-Wen"

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Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device
(1970-01-01)
Huang, Wei-Chen
;
Zheng, Hao-Xuan
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tan, Yung-Fang
In this study, a one transistor one resistor (1T1R) structure combining a fin-like low-temperature polycrystalline-silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin-like LTPS transistor, both n-type and p-types show excellent electrical output characteristics. Fin-like structure produces more stable output characteristics. Also, the forming and current-voltage (I-V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about -1.9 V. As for the I-V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin-like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin-like LTPS transistor for application in current integrated circuit processes without difficulty.