Browsing by Author "Chen, Yang Chuan"

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An Interconnecting Technology for RF MEMS Heterogeneous Chip Integration
(2010-04-01)
Chao, Tzu-Yuan
;
Li, Chun-Hsing
;
Chen, Yang Chuan
;
Chen, Hsin-Yu
;
Cheng, Yu-Ting
An interconnecting technology using a Au-Au thermocompressive bond has been successfully developed for microelectromechanical system (MEMS) heterogeneous chip integration in this paper. The Daisy chain and RF transition structures are both designed and fabricated for the electrical characterization of the interconnect scheme. Measured dc contact resistance is about 14 +/- 5 m Omega for the bonding interface of Ni (1 mu m)/Au (0.4 mu m)/Au (0.4 mu m)/Ni (1 mu m) with a pad size of 40 mu m in diameter. The electrical transition between two chips, which have coplanar waveguides (CPWs) and microstrip lines, respectively, can be well interconnected with less than -15 dB return loss and -1.8 dB insertion loss up to 50 GHz without implementing complex structure designs and extra impedance matching networks in the transition by employing this technology. Meanwhile, it is found that the mechanical strength for the interconnecting bond can be as large as 100 MPa. A low-power RF low-noise amplifier has been successfully designed, fabricated, and utilized in this paper to demonstrate the feasibility of the interconnecting technology for RF MEMS heterogeneous chip integration by integrating a Taiwan Semiconductor Manufacturing Corporation 0.18-mu m RF complimentary metal-oxide-semiconductor chip with a silicon carrier, where high Q MEMS inductors are fabricated and utilized for good circuit performance in terms of excellent impedance matching, power gain, and gain flatness.
Low power 3 similar to 8-GHz UWB tunable LNA design using SiP technology
(2006)
Chen, Yang Chuan
;
Li, Chun-Hsing
;
Huang, J. K.
;
Kuo, Chien-Nan
;
Cheng, Yu Ting
In this paper we present a tunable ultra-wideband LNA using system-in-package solution to enhance gain and noise performance. Several high-Q MEMS inductors are employed at the input matching network and the tunable resonator load. SiP integration is realized by Au-Au thermal compression bond of low electrical parasitic effects. It is found those inductors improve noise figure by 2dB and help achieve gain flatness in a broad frequency range of 3- to 8-GRz.