Browsing by Author "Chen, Yi-Hao"

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Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots
(2008-07-01)
Tseng, Chi-Che
;
Chou, Shu-Ting
;
Chen, Yi-Hao
;
Chen, Cheng-Nan
;
Lin, Wei-Hsun
Ten-period InAs-GaAs quantum-dot (QD) infrared photodetectors grown under different In adatom supply procedures are investigated. Two In adatom supply procedures of In shutter 1) always opened and 2) periodically opened/closed are adopted in this letter. Larger QD sizes in both height and diameter and more uniform size distribution are observed for samples grown under an In shutter periodically opened/closed condition. The device with QDs grown under the In shutter always opened condition has revealed shorter detection wavelengths and enhanced normal incident absorption. The phenomenon shows that beside the increase of energy difference between confinement states, smaller QD sizes would also enhance the normal incident absorption predicted for the theoretically zero-dimensional QD structures.
Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots
(2008-05-01)
Tseng, Chi-Che
;
Chou, Shu-Ting
;
Chen, Yi-Hao
;
Chung, Tung-Hsun
;
Lin, Shih-Yen
In this article, we report the growth of InAs/GaAs quantum dots (QDs) grown under different As(4)-supply procedures. The growth of the investigated samples carried out by the three procedures of As shutter always opened, As shutter initially opened, and As shutter initially closed. The samples grown by the former two approaches show a uniform QD distribution and the multiple-peak luminescence, which correspond to ground-state, first-excited-state, and second-excited-state luminescence, while that grown by the latter only shows large InAs islands. The results suggest that the As-stabilized condition at the initial stage of QD growth is very critical for the high-quality QD formation. (C) 2008 American Vacuum Society.
Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors
(2008-09-01)
Chou, Shu-Ting
;
Lin, Shih-Yen
;
Tseng, Chi-Che
;
Chen, Yi-Hao
;
Chen, Cheng-Nan
In this letter, we investigate the performance of single-period InAs-GaAs quantum-dot (QD) infrared photodetectors, in which the single-period QD is sandwiched by different thicknesses of the undoped GaAs confinement layers. By using a 5-nm p-type GaAs layer as a current blocking barrier, the investigated three devices exhibit no response. the highest response, and the medium response, respectively. It is attributed to three different electron occupancy situations in the QD region resulted from the various locations of the Fermi level. A higher barrier for the thermionic emission current is observed for the device with a lower Fermi level in the QD structure. It is attributed to the acceptor-like behavior of the depleted QD such that a higher barrier height would be observed.
The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetector
(2008-11-01)
Tseng, Chi-Che
;
Chou, Shu-Ting
;
Lin, Shin-Yen
;
Chen, Cheng-Nan
;
Lin, Wei-Hsun
This study explores the growth and effects of a ten-period InAs/GaAs quantum-dot infrared photodetector (QDIP). With a uniform quantum-dot (QD) size distribution and a QD density of 2.8x10(10) cm(-2), this 10 K photoluminescence spectrum shows a peak energy at 1.07 eV and a narrow full width at half maximum of 31.7 meV. The QDIP exhibits an asymmetric response under different voltage polarities and a high responsivity of 1.7 A/W at -1.1 V. Another noticeable observation in the spectral response of the device is the 6 mu m peak detection wavelength with a high spectral broadening Delta lambda/lambda of 0.67. By analyses of the photoluminescence excitation spectrum and the temperature dependence of spectral response, the wide spectral response of the QDIP is attributed to the summation of transitions between QD excited states and the wetting layer states, instead of transitions between QD ground state and higher excited states.
Time-resolved phase-change recording mark formation with zinc oxide near-field optical active layer
(2015-09-01)
Kao, Tsung Sheng
;
Chen, Mu-Ku
;
Chen, Jia-Wern
;
Chen, Yi-Hao
;
Wu, Pei Ru
In this paper, an optical active thin film of zinc oxide (ZnOx) nano-composites exploited for the enhancement of optical signals in an ultra-high density recording scheme has been demonstrated. Via the electron microscope investigation, the results display randomly distributed crystalline nanograins in the ZnOx thin films. Optical disks with the ZnOx nanostructured thin films show that the carrier-to-noise ratio (CNR) above 25 dB can be obtained at the mark trains of 100 nm, while the optimal writing power is reduced as a function of the increasing thickness of the ZnOx films. Furthermore, by conducting a series of the optical pump-probe experiments, the optical responses of recording marks on as-deposited phase-change Ge2Sb2Te5 (as-GST) recording layers present that the highly contrast bright recording bits can be acquired with the existence of the ZnOx nanostructured thin films, providing prospective potentials in future data storage and optoelectronic devices. (C) 2015 The Japan Society of Applied Physics