Browsing by Author "Chen, Yin-Han"

Now showing 1 - 9 of 9

A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response
(2015)
Hsu, Lung-Hsing
;
Hsu, Shun-Chieh
;
Lee, Hsin-Ying
;
Tsai, Yu-Lin
;
Lin, Da-Wei
An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.
Highly Efficient Hybrid Quantum Dot Light Emitting Diodes with Prolonged Lifetime
(2015)
Hsu, Shun-Chieh
;
Chen, Yin-Han
;
Tu, Zong-Yi
;
Han, Hau-Vei
;
Lin, Shih-Li
A highly efficient LED is demonstrated by incorporating the colloidal quantum dots and sodium chloride. Further lifetest shows great stability up to 104 hours under 194 mW/cm(2) of UV pump power.
Highly Stable and Efficient Hybrid Quantum Dot Light-Emitting Diodes
(2015-10-01)
Hsu, Shun-Chieh
;
Chen, Yin-Han
;
Tu, Zong-Yi
;
Han, Hau-Vei
;
Lin, Shih-Li
A highly efficient and reliable hybrid quantum dot (QD) light-emitting diode (LED) is demonstrated and analyzed. The CdTe colloidal QDs are embedded in the sodium chloride (NaCI) ionic crystal to prevent external wear. The GaN-based ultraviolet (UV) LED is used as the excitation source. The mixture of colloidal QD/NaCI composite and polymer can be filled inside the standard LED package and optically pumped by the UV LED. Two different filling layer designs are fabricated simultaneously for comparative study. Due to extra scattering brought by the sodium chloride grains, the resultant photon conversion efficiency (POE) can be as high as 72.6% at the medium current level. For the long-term stability assessment, two different UV pumping intensities were set up: One is equivalent to 111 mW/cm(2), and the other is 906 mW/cm(2). With this encapsulation, the stability of the colloidal QD light output over time can be improved, and a prolonged lifetime of 6488 h can be demonstrated under the continuous UV aging condition.
Numerical Analysis of Nano-scale Solar Cells with Surface States
(2015)
Lin, Chien-chung
;
Lin, Shih-Li
;
Tseng, Hung-Ruei
;
Hsu, Shun-Chieh
;
Chen, Yin-Han
As the scale of the solar cell moves into nanometer regime, the numerical analysis should evolve at the same pace. By using the Matlab (R) as the tool and solving the general Poisson and continuity equations, we are able to have a good platform for the nano-scale solar cells. By adapting proper parameters, the perovskite solar cells and their behavior under different surface recombination conditions were analyzed.
Numerical Study of Surface-dependent performances of Nano-scale Solar Cells
(2015)
Lin, Shih-Li
;
Tseng, Hung-Ruei
;
Hsu, Shun-Chieh
;
Chen, Yin-Han
;
Lin, Chien-Chung
A numerical method to correlate the surface recombination velocity and the Fermi-level pinning is provided. This correlation was integrated into the simulation of the GaAs nano-scale solar cells, and the surface-dependent performance of the solar cells can be obtained. This method is also applied to the simulation of the radial-junction nanorod solar cells with sidewall contacts.
Optical Study of Multiple-layered Colloidal Quantum Dots
(2015)
Chen, Yin-Han
;
Hsu, Shun-Chieh
;
Lin, Shih-Li
;
Chen, Teng-Ming
;
Lin, Chien-Chung
The photoluminescence (PL) with CdTe quantum dots (QDs) -NaCl crystals, mixed with organic film on glass substrate, was measured. This organic film was made by Polydimethylsiloxane (PDMS). Under different overlapping manner, a better PL intensity can be found at multiple layers condition.
Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performances
(2015)
Hsu, Shun-Chieh
;
Chen, Yin-Han
;
Chen, Hsuan-An
;
Lin, Shih-Yen
;
Shen, Tien-Lin
In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the V-oc reduction until 80 Suns.
Simulation of Charge Collection Probability in GaAs and Si Solar Cells from External Quantum Efficiency
(2015)
Lin, Shih-Li
;
Tseng, Hung-Ruei
;
Hsu, Shun-Chieh
;
Chen, Yin-Han
;
Lin, Chien-Chung
The charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.
Surface Recombination Dependent Performance of A Nano-scale P-n Junction Solar Cell
(2014-01-01)
Tseng, Hung-Ruei
;
Hsu, Shun-Chieh
;
Lin, Shih-Li
;
Chen, Yin-Han
;
Lin, Chien-Chung
A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab. environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on Jsc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 107 m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.