Browsing by Author "Chen, Yu-Chung"

Now showing 1 - 4 of 4

Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution
(2010)
Chen, Yu-Chung
;
Chao, Yu-Cheng
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.
Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate
(2014-03-01)
Chen, Yu-Chung
;
Lin, Bo-Wen
;
Hsu, Wen-Ching
;
Wu, YewChung Sermon
;
材料科學與工程學系
A wet etching process was employed to investigate the evolution of pyramids on the patterned sapphire substrate (PSS). It has been found that the PSS comprised a hexagonal pyramid covered with six facets {3 (4) over bar 1 7} when disk-shaped SiO2 mask still remained. Three facets {1 (1) over bar 0 5} were exposed when mask was etched away. In this study, a continuous etching process was performed. It was found that another six facets {4 (5) over bar 1 30} and another three facets {1 (1) over bar 0 10} appeared on the bottom and the top of pyramid. Finally, when the etching time reached around 5 min, most of pyramids on the PSS disappeared. (C) 2013 Elsevier B.V. All rights reserved.
The Formation and the Plane Indices of Etched Facets of Wet Etching Patterned Sapphire Substrate
(2012)
Chen, Yu-Chung
;
Hsiao, Feng-Ching
;
Lin, Bo-Wen
;
Wang, Bau-Ming
;
Wu, YewChung Sermon
A two-step chemical wet etching processes were used to investigated the formation and the plane indexes of exposed etched facets of wet etching patterned sapphire substrate (PSS). It was found when SiO2 mask still remained on the top c-plane, the structure of PSS comprised of a hexagonal pyramid covered with six facets {3 (4) over bar 17} with a flat top c-plane. When SiO2 mask were etched away, beside six facets on the bottom, there were 3 extra facets {1 (1) over bar 05} exposed on the top. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.095206jes] All rights reserved.
The Formation of Smooth Facets on Wet-Etched Patterned Sapphire Substrate
(2014)
Chen, Yu-Chung
;
Lin, Bo-Wen
;
Hsu, Wen-Ching
;
Wu, YewChung Sermon
;
材料科學與工程學系
In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B-1, B-2, D-1, D-2 and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {13 (4) over bar7}, {10 (1) over bar4} and {12 (3) over bar5}, respectively. On the other hand, the surfaces of B-1, B-2, D-1 and D-2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets. (C) 2013 The Electrochemical Society. All rights reserved.