Browsing by Author "Chen Chen-Chia"

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Method for manufacturing optoelectronic memory device
(2012-08-21)
Wei Kung-Hwa
;
Sheu Jeng-Tzong
;
Chen Chen-Chia
;
Chiu Mao-Yuan
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.
Method for measuring optoelectronic memory device
(2013-03-05)
Wei Kung-Hwa
;
Sheu Jeng-Tzong
;
Chen Chen-Chia
;
Chiu Mao-Yuan
A method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.
Optoelectronic memory device and method for manufacturing and measuring the same
(2012-05-15)
Wei Kung-Hwa
;
Sheu Jeng-Tzong
;
Chen Chen-Chia
;
Chiu Mao-Yuan
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.
Sensing element integrating silicon nanowire gated-diodes, manufacturing method and detecting system thereof
(2013-07-09)
Sheu Jeng-Tzong
;
Chen Chen-Chia
The invention disclosed a sensing element integrating silicon nanowire gated-diodes with microfluidic channel, a manufacturing method and a detecting system thereof. The sensing element integrating silicon nanowire gated-diodes with a microfluidic channel includes a silicon nanowire gated-diode, a plurality of reference electrodes, a passivation layer and a microfluidic channel. The reference electrodes are formed on the silicon nanowire gated-diodes, and the passivation layer having a surface decorated with chemical materials is used for covering the silicon nanowire gated-diodes, and the microfluidic channel is connected with the passivation layer. When a detecting sample is connected or absorbed on the surface of the passivation layer, the sensing element integrating silicon nanowire gated-diodes with the microfluidic channel can detect an electrical signal change.