Browsing by Author "Chen Kuei-Ming"

Now showing 1 - 4 of 4

Method for smoothing group III nitride semiconductor substrate
(2013-09-24)
Lee Wei-I
;
Chen Kuei-Ming
;
Wu Yin-Hao
;
Yeh Yen-Hsien
The invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.
Method for smoothing group lll nitride semiconductor substrate
(2012-07-19)
Lee Wei-I
;
Chen Kuei-Ming
;
Wu Yin-Hao
;
Yeh Yen-Hsien
The invention discloses a smoothing method to decrease bowing of group III nitride semiconductor substrate. The certain face of group III nitride semiconductor substrates is etched under the appropriate etching recipe and time, the certain morphology such as rod-type and other structures are appeared at the certain face. And such structures releases the compressive stresses at these certain faces, resulting in clearly increasing the bowing radius of the group III nitride semiconductor substrates, finally decreasing the bowing phenomenon of the group III nitride semiconductor substrate.
Method for treating group III nitride semiconductor
(2013-10-22)
Lee Wei-I
;
Hsu Ying-Chia
;
Yeh Yen-Hsien
;
Chen Kuei-Ming
The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.
Method for treating group III nitride semiconductor
(2012-03-01)
Lee Wei-I
;
Hsu Ying-Chia
;
Yeh Yen-Hsien
;
Chen Kuei-Ming
The invention discloses a treating method to produce various patterns on the surface by using gases with ability to etch the group III nitride semiconductor in certain conditions. The selective etching makes some specific patterns on group III nitride semiconductor surface, and different forms of the patterns can be controlled by the selective etching conditions.