Browsing by Author "Chen-Han CHOU"

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FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH
(2017-05-04)
Chao-Hsin CHIEN
;
Chen-Han CHOU
;
Cheng-Ting CHUNG
;
Samuel C. PAN
A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(2017-09-28)
Chao-Hsin CHIEN
;
Chi-Wen LIU
;
Chen-Han CHOU
A semiconductor device including a Fin FET device includes a fin structure extending in a first direction and protruding from a substrate layer. The fin structure includes a bulk stressor layer formed on the substrate layer and a channel layer disposed over the bulk stressor layer. An oxide layer is formed on the substrate layer extending away from the channel layer. A source-drain (SD) stressor structure is disposed on sidewalls of the channel layer over the oxide layer. A gate stack including a gate electrode layer and a gate dielectric layer covers a portion of the channel layer and extends in a second direction perpendicular to the first direction.