Browsing by Author "Cheng, Chia-Yao"

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Investigation of Electrical Characteristics on LaAlO3/ZrO2/IGZO TFTs with Microwave Annealing
(2019-04-01)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Zhang, Yu-Xin
;
Cheng, Chia-Yao
Conventional thin film transistor suffered from high threshold voltage, poor subthreshold swing, and high operation voltage. These shortcomings make the traditional thin film transistor does not meet the needs with the high-performance, high-resolution, low temperature and energy conservation nowadays. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is promising to replace conventional furnace annealing and applied in the investigation. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. With adjusting the power/time of microwave annealing, the effect on electrical characteristics of a-IGZO TFTs is investigated.
Investigation of Microwave Assisted Annealing on AP-PECVD Fabricated In-Ga-Zn-O Thin Film Transistors under Positive Bias Temperature Stress
(2016)
Wu, Chien-Hung
;
Huang, Bo-Wen
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Chang, Kow-Ming
;
Cheng, Chia-Yao
;
Chen, Hsin-Ying
In this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA with 300W for 100sec treatment on AP-IGZO TFTs have been fabricated successfully and show excellent electrical characteristics including a VTH of -1.23 V, SS of 0.18 V/dec, mu FE of 17.4 cm2/V-s, and Ion/Ioff ratio of 8.14 106. Stretched exponential time dependence model is used to analyze the mechanism of AP-IGZO TFTs under PBTI stress. Accordingly, chemisorption model for oxygen adsorption at AP-IGZO backchannel with and without MWAA is proposed to explain the mechanism under PBTI stress.
The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors
(2019-04-01)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Chen, Yi-Ming
;
Zhang, Yu-Xin
;
Cheng, Chia-Yao
Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, flexible, transmission, and uniformity. The thin film transistors (TFTs) with a-IGZO thin film as active layer perform higher field-effect mobility (>10 cm(2)/V . S), larger I-on/I-off ratio (>10(6)), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.