Browsing by Author "Cheng, Ching-Yuan"

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Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si, (111) heterojunction grown by atomic layer deposition
(2010-11-01)
Ku, Ching-Shun
;
Huang, Jheng-Ming
;
Cheng, Ching-Yuan
;
Lin, Chih-Ming
;
Lee, Hsin-Yi
Optical and structural properties of n-ZnO films grown on a p-Si (111) substrate by atomic layer deposition were observed using in situ synchrotron x-ray diffraction during annealing. The photoluminescence showed a complicated photon response with increasing annealing temperature. In situ x-ray diffraction indicated the growth of grains for an annealing temperature from 500 to 800 degrees C with the orientation altering from polycrystalline to preferential (200). Measurements with a time-of-flight secondary-ion mass spectrometer indicated that the outgassing of hydrogen atoms and ZnO/Si interdiffusion behavior were correlated with the intensity and position of emissions in photoluminescence spectra. (c) 2010 American Institute of Physics. [doi:10.1063/1.3511284]
Novel Pore-sealing of Ordered, Porous Silica, SBA-15 for Low-k Underfill Materials
(2009)
Hsu, Kuo-Yuan
;
Chen, Kuei-Yue
;
Cheng, Ching-Yuan
;
Lee, Jhih-Jhao
;
Leu, Jihperng
Underfill materials, consisting of organic resin and inorganic filler, have been widely employed in flip-chip technology for preventing the failure of solder joints during packaging process. In order to meet the requirements of high frequency device applications, low-dielectric-constant underill is highly desired to alleviate the power consumption issue. However, it is disadvantageous to introduce low-k into organic resin because of its high cost and low volume fraction. Alternative approach is to use highly porous silica filler with appropriate pore sealing prior to mixing with epoxy. In this paper, a siloxane compound, polymerized vinyl-trimethoxysilane (poly-VSQ), was synthesized and applied to an ordered, porous silica structure, SBA-15 to study its effectiveness in pore sealing and interaction with SBA-15 matrix for low-k underfill applications. We have developed a convenient pore sealing treatment using poly-VSQ to achieve a 10.9% reduction (from 3.2 to 2.85) in dielectric constant of underfill material with 15% filler content by fully retaining the high porosity (61%) of SBA15. Moreover, excellent mechanical strength could be maintained as 3.0GPa without any interfacial delamination.