Browsing by Author "Cheng, ES"

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Direct experimental evidence of the hole capture by resonant levels in boron doped silicon
(2005)
Yen, ST
;
Tulupenko, V
;
Cheng, ES
;
Dalakyan, A
;
Lee, CP
The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time.
Evidence for capture of holes into resonant states in boron-doped silicon
(2004-11-01)
Yen, ST
;
Tulupenko, VN
;
Cheng, ES
;
Chung, PK
;
Lee, CP
The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics.