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Browsing by Author "Cheng, H. L."

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    Diode-pumped passively mode-locked 1342 nm Nd:YVO(4) laser with an AlGaInAs quantum-well saturable absorber
    (2009-08-01)
    Huang, S. C.
    ;
    Cheng, H. L.
    ;
    Chen, Yi-Fan
    ;
    Su, K. W.
    ;
    Chen, Y. F.
    We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO(4) laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated. (C) 2009 Optical Society of America
  • Thumbnail Image
    Item type:Item,
    Diode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber
    (2009-08-01)
    Huang, S. C.
    ;
    Cheng, H. L.
    ;
    Chen, Yi-Fan
    ;
    Su, K. W.
    ;
    Chen, Y. F.
    We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated. (C) 2009 Optical Society of America