Browsing by Author "Cheng, KL"

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Deposition of polycrystalline beta-SiC films on Si substrates at room temperature
(1997-01-13)
Cheng, KL
;
Cheng, HC
;
Lee, WH
;
Lee, CP
;
Liu, CC
Polycrystalline beta-SiC, with grain size up to 1500 Angstrom, has been room-temperature-deposited on Si substrates by electron cyclotron resonance chemical vapor deposition. Microwave power and the hydrogen carrier gas are the key parameters to lower the deposition temperature. According to the results of the cross-sectional transmission electron microscopy, the grain size appeared to be in the same scale as that deposited at 500 degrees C while a large amount of plasma-induced defects were observed in the Si substrate for the room-temperature-deposited samples. Hence, a CH4-plasma treatment prior to the beta-SiC film growth was adopted, forming a SiC-like interfacial layer to suppress the substrate damages. (C) 1997 American Institute of Physics.
Diagnostic techniques for polycrystalline thin film growth
(1996)
Cheng, KL
;
Cheng, HC
;
Yew, TR
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2
(1995-12-01)
Liu, CC
;
Lee, CP
;
Cheng, KL
;
Cheng, HC
;
Yew, TR
SiC films were deposited on Si(100) substrates by electron cyclotron resonance chemical vapor deposition at 500 degrees C using SiH4/CH4/H-2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy, respectively. The film composition and microstructure are correlated to process variables. The deposition mechanism which controls the film characteristics is presented.
Low temperature deposited highly-conductive N-type SiC thin films
(1997)
Cheng, KL
;
Cheng, HC
;
Lee, WH
;
Lee, C
;
Yew, TR
Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell...etc. Were in this paper, we study the influences of the diluted PH3 now rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH; now rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H-2 flow rate is above or below 40 seem, respectively.
Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C
(1996)
Cheng, KL
;
Liu, CC
;
Fu, CM
;
Cheng, HC
;
Lee, C