Browsing by Author "Cheng, Kai-Chung"

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A study of total relative Displacements of permutations in paths and cycles
(2008-03-01)
Cheng, Kai-Chung
;
Fu, Hung-Lin
;
Chiang, Nam-Po
;
Tzeng, Chien-Kuo
;
應用數學系
Let G = (V, E) be a connected graph and let phi be a permutation of V. The total relative displacement of the permutation phi in G is delta(phi) (G) = Sigma ({x,y}CV) vertical bar d(x,y) - d(phi(x),phi(y))vertical bar, where d(x, y) means the distance between x and y in G, i.e., the length of a shortest path between x and y. A permutation phi which attains the minimum value of non-zero value of delta(phi)(G) is referred to as a near-automarphism of G and a permutation phi which attains the maximum value of delta(phi)(G) is referred to as a chaotic mapping of G. In this paper, we study the maximum value of delta(phi) (G) among all permutations in paths and cycles.
Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors
(2017-03-01)
Chen, Guan-Fu
;
Chang, Ting-Chang
;
Chen, Hua-Mao
;
Chen, Bo-Wei
;
Chen, Hong-Chih
This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.