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Browsing by Author "Cheng, Kai-Hung"

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    Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
    (2013-02-01)
    Tseng, Hsueh-Chih
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    Chang, Ting-Chang
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    Cheng, Kai-Hung
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    Huang, Jheng-Jie
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    Chen, Yu-Ting
    This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved.