Browsing by Author "Cheng, MY"

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Mechanism for Cu void defect on various electroplated film conditions
(2006-03-01)
Feng, HP
;
Cheng, MY
;
Wang, YL
;
Chang, SC
;
Wang, YY
This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. (c) 2005 Elsevier B.V. All rights reserved.