Browsing by Author "Cheng, Ming-Lung"

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A constant-mobility method to enable MOSFET series-resistance extraction
(2007-12-01)
Lin, Da-Wen
;
Cheng, Ming-Lung
;
Wang, Shyh-Wei
;
Wu, Chung-Cheng
;
Chen, Ming-Jer
A new method of extracting the MOSFET series resistance R-sd is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier mobility remains constant for high vertical electric fields. It is this unique property which, makes the proposed method suitable for short-channel devices.
A millisecond-anneal-assisted selective fully silicided (FUSI) gate process
(2008-09-01)
Lin, Da-Wen
;
Wang, Maureen
;
Cheng, Ming-Lung
;
Sheu, Yi-Ming
;
Tarng, Bennet
We demonstrate, for the first time, an integration-friendly selective PMOSFET fully silicided (FUSI) gate process. In this process, a millisecond-anneal (NISA) technique is utilized for the nickel silicide phase transformation. A highly tensile FUSI gate electrode is created and hence exerts compressive stress in the underlying channel. The highly flexible integration scheme successfully, and exclusively, implements uniform P+ FUSI gates for PMOSFETs while preserving a FUSI-free N+ poly-Si gate for PMOSFETs with the feature size down to 30 run. A 20% improvement in FUSI-gated PMOSFET I-on-I-off is measured, which can be attributed to the enhanced hole mobility and the elimination of P+ poly-gate depletion.
A Novel Method of MOSFET Series Resistance Extraction Featuring Constant Mobility Criteria and Mobility Universality
(2010-04-01)
Lin, Da-Wen
;
Cheng, Ming-Lung
;
Wang, Shyh-Wei
;
Wu, Chung-Cheng
;
Chen, Ming-Jer
A method of MOSFET series resistance extraction is established in this paper. The core of this method relies on the constant mobility criteria, while for different gate lengths, it preserves the shape of universal mobility curves in the high-vertical-field regime. Consequently, the series resistance of a MOSFET can be extracted in an analytical and self-consistent manner, achieved without the knowledge of the gate oxide thickness, channel length, channel doping, or channel stress. Reasonable values of extracted series resistance are demonstrated in a wide range of gate length. Technology computer-aided design simulation further corroborates the validity of the proposed method, particularly for devices with heavily doped source/drain extensions. The constant mobility criteria with respect to the bulk charge linearization coefficient are also verified.