Browsing by Author "Cheng, S. L."

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An AR-Based Manipulation System for Industrial Robots
(2017-01-01)
Su, Y. H.
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Liao, C. F.
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Ko, C. H.
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Cheng, S. L.
;
Young, K. Y.
Along with the progress of robot technologies, industrial robot manipulators have been employed for more versatile tasks. Consequently, the teaching pendant or keyboard may not meet the need of delicate manipulation. Intuitive manipulation and friendly human-robot interface are thus demanded. In this paper, we propose a novel manipulation system based on using augmented reality (AR) technique and implement it on a tablet PC. We also equip the system with a visual lead-through function, among others. Experiments are performed to demonstrate its effectiveness, along with questionnaire conducted to evaluate user response.
Development of an Effective 3D VR-Based Manipulation System for Industrial Robot Manipulators
(2019-01-01)
Su, Y. H.
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Xu, Y. Q.
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Cheng, S. L.
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Ko, C. H.
;
Young, K. Y.
Along with fast progress in their ability and flexibility, more robots are introduced for automation, and applied for more complicated tasks. Consequently, it demands more versatile and advanced manipulative devices for task manipulation and teaching. We thus propose a novel manipulation system based on virtual reality (VR). This system is intended for achieving 3D manipulation in a real-time manner. VR is recognized for capable of providing immersive feeling for the user. Meanwhile, it also faces the challenge in making the VR environment as close as the real one. To tackle this, we propose building a point cloud model of the real environment and integrating it with the virtual one. Meanwhile, to ease the load of the user during manipulation, we also develop a user-friendly interface, including a mechanism that can adjust the resolution of the command according to task complexity. Experiments are conducted to evaluate system's performance, and questionnaires administered for acquiring user's feedback.
Enhanced growth of low-resistivity titanium silicides on epitaxial Si(0.7)Ge(0.3) on (001)Si with a sacrificial amorphous Si interlayer
(2010-10-01)
Wu, W. W.
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Wang, C. W.
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Chen, K. N.
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Cheng, S. L.
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Lee, S. W.
Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si(0.7)Ge(0.3) with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi(2) on Si(0.7)Ge(0.3) grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2010 Published by Elsevier B.V.
Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer
(2010-10-01)
Wu, W. W.
;
Wang, C. W.
;
Chen, K. N.
;
Cheng, S. L.
;
Lee, S. W.
Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2010 Published by Elsevier B.V.
Ni silicide formation on epitaxial Si(1-y)C(y)/(001) layers
(2010-10-01)
Lee, S. W.
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Huang, S. H.
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Cheng, S. L.
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Chen, P. S.
;
Wu, W. W.
The formation of Ni silicides on Si(1 - y)C(y) (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si(0.982)C(0.018) samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si(1 - y)C(y) epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si(1y)C(y) for device applications. (C) 2010 Elsevier B.V. All rights reserved.
Ni silicide formation on epitaxial Si1-yCy/(001) layers
(2010-10-01)
Lee, S. W.
;
Huang, S. H.
;
Cheng, S. L.
;
Chen, P. S.
;
Wu, W. W.
The formation of Ni silicides on Si1 - yCy (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si1yCy for device applications. (C) 2010 Elsevier B.V. All rights reserved.