Browsing by Author "Cheng, Shan-Yun"

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Site-controlled crystalline InN growth from the V-pits of a GaN substrate
(2017-05-31)
Kuo, Chien-Ting
;
Hsu, Lung-Hsing
;
Lai, Yung-Yu
;
Cheng, Shan-Yun
;
Kuo, Hao-Chung
A site-controlled crystalline InN growth from the V-pits of a GaN substrate was investigated. The V-pits were fabricated by epitaxial lateral growth of GaN over SiO2 disks patterned on a sapphire substrate. InN crystals were found to preferably grow on the inclined {10-11} crystal planes of the V-pits. A V-pit size of 1 mu m or less can provide precise site-controlled InN nucleation at the V-pit bottom, while no InN was grown on the rest of the exposed GaN surfaces. The site-controlled nucleation is attributed to the low surface energy point created by the converging six {10-11} crystal facets at the V-pit bottom. When In source supply is below a certain value, this V-pit bottom is the only location able to aggregate enough active sources to start nucleation, thereby providing site-controlled crystal growth. (C) 2017 Elsevier B.V.