Browsing by Author "Cheng, Shun-Jen"

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A look into the origin of shunt leakage current of Cu(In,Ga)Se-2 solar cells via experimental and simulation methods
(2013-10-01)
Liao, Yu-Kuang
;
Kuo, Shou-Yi
;
Hsieh, Ming-Yang
;
Lai, Fang-I
;
Kao, Ming-Hsuan
This study investigates how to apply space-charge-limited (SCL) current to describe shunt leakage current in a CIGS solar cell. Possible factors inducing SCL current have been observed through conductive atomic force microscopy (C-AFM), which supports the SCL current theory, describing the shunt current of a CIGS solar cell. In simulations derived from experimental data, deviation of dark IV curves is due to flaws in the real device. These flaws are absent in simulation, but investigation verifies the characteristics of SCL current component's experimental IV curves within shunt leakage current. A device with a metal/CIGS/metal structure could simulate SCL current and confirm its characteristics. Such a simulated structure, representing flaws inserted into a CIGS solar cell, generates the same dark-current behavior revealed in experimental dark IV curves. This study investigates the response of dark current to varying sizes of the flaw within the CIGS solar cell. (C) 2013 Elsevier B.V. All rights reserved.
Anticorrelation between the splitting and polarization of the exciton fine structure in single self-assembled InAs/GaAs quantum dots
(2011-02-28)
Lin, Chia-Hsien
;
You, Wen-Ting
;
Chou, Hsiang-Yu
;
Cheng, Shun-Jen
;
Lin, Sheng-Di
We report on a systematic correlation between the fine-structure splitting and polarization anisotropy of excitons in InAs/GaAs quantum dots, but with an unexpected reversal in order of the polarization eigenaxes. Such an anticorrelation is explained by a large valence-band-mixing induced splitting due to the shape and strain anisotropies. The strength and phase of valence band mixing are also found to play an important role in the tuning of fine structure splitting using an in-plane magnetic field.
Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition
(2017-04-01)
Liao, Yu-Kuang
;
Liu, Yung-Tsung
;
Hsieh, Dan-Hua
;
Shen, Tien-Lin
;
Hsieh, Ming-Yang
Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin filmswith the thickness of a fewnanometers on rough surfaces. We present a new "paradigm shift" non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In, Ga) Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.
Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
(2010-04-01)
Ling, Shih-Chun
;
Chao, Chu-Li
;
Chen, Jun-Rong
;
Liu, Po-Chun
;
Ko, Tsung-Shine
The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nanorod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 mu m thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2 x 10(9) cm(-2) by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth. (C) 2009 Elsevier B.V. All rights reserved.
Diamagnetic Response of Exciton Complexes in Semiconductor Quantum Dots
(2008-12-31)
Tsai, Ming-Fu
;
Lin, Hsuan
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Lin, Chia-Hsien
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Lin, Sheng-Di
;
Wang, Sheng-Yun
We report measurements of diamagnetic shifts for different exciton complexes confined in small InAs quantum dots. The measured diamagnetic responses are sensitive to the number of carriers in the exciton complexes, with systematic differences between neutral excitons, biexcitons, and trions. Theoretical calculations suggest that such systematic differences arise from very different extents of electron and hole wave functions confined in small quantum dots. The measured magnetic response of Coulomb energies is found to vary with the cube of the wave function extent, and can be a sensitive probe to the electron-hole wave function asymmetry.
Distinctive Signatures of the Spin- and Momentum-Forbidden Dark Exciton States in the Photoluminescence of Strained WSe2 Monolayers under Thermalization
(2019-04-01)
Peng, Guan-Hao
;
Lo, Ping-Yuan
;
Li, Wei-Hua
;
Huang, Yan-Chen
;
Chen, Yan-Hong
With both spin and valley degrees of freedom, the low-lying excitonic spectra of photoexcited transition-metal dichalcogenide monolayers (TMDC-MLs) are featured by rich fine structures, comprising the intravalley bright exciton states as well as various intra- and intervalley dark ones. The latter states can be classified as those of the spin- and momentum-forbidden dark excitons according to the violated optical selection rules. Because of their optical invisibility, these two types of the dark states are in principle hardly observed and even distinguished in conventional spectroscopies although their impacts on the optical and dynamical properties of TMDC-MLs have been well noticed. In this Letter, we present a theoretical and computational investigation of the exciton fine structures and the temperature-dependent photoluminescence spectra of strained tungsten diselenide monolayers (WSe2-MLs) where the intravalley spin-forbidden dark exciton lies in the lowest exciton states and other momentum-forbidden states are in the higher energies that are tunable by external stress. The numerical computations are carried out by solving the Bethe-Salpeter equation for an exciton in a WSe2-ML under the stress-control in the tight-binding scheme established from the first principle computation in the density functional theory. According to the numerical computation and supportive model analysis, we reveal the distinctive signatures of the spin- and momentum-forbidden exciton states of strained WSe2-MLs in the temperature-dependent photoluminescences and present the guiding principle to infer the relative energetic locations of the two types of dark excitons.
Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots
(2011-04-22)
Liao, Yu-Huai
;
Climente, Juan I.
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Cheng, Shun-Jen
;
電子物理學系
;
Department of Electrophysics
We present a comprehensive theoretical investigation of spin relaxation processes of excitons in photoexcited self-assembled quantum dots. The exciton spin relaxations are considered between dark- and bright-exciton states via the channels created by various spin-admixture mechanisms, including electron Rashba and Dresselhaus spin-orbital couplings (SOCs), hole linear and hole cubic SOCs, and electron hyperfine interactions, incorporated with single-and double-phonon processes. The hole-Dresselhaus SOC is identified as the dominant spin-admixture mechanism, leading to relaxation rates as fast as similar to 10(-2) ns(-1), consistent with recent observations. Moreover, due to significant electron-hole exchange interactions, single-phonon processes are unusually dominant over two-phonon ones in a photoexcited dot even at temperatures as high as 15K.
Double-finger-gate controlled spin-resolved resonant quantum transport in the presence of a Rashba-Zeeman gap
(2015-03-04)
Tang, Chi-Shung
;
Tseng, Shu-Ting
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Gudmundsson, Vidar
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Cheng, Shun-Jen
;
電子物理學系
We investigate double finger gate (DFG) controlled spin-resolved resonant transport properties in an n-type quantum channel with a Rashba-Zeeman (RZ) subband energy gap. By appropriately tuning the DFG in the strong Rashba coupling regime, resonant state structures in conductance can be found that are sensitive to the length of the DFG system. Furthermore, a hole-like bound state feature below the RZ gap and an electron-like quasi-bound state feature at the threshold of the upper spin branch can be found that is insensitive to the length of the DFG system.
Effects of electrostatic environment on the electrically triggered production of entangled photon pairs from droplet epitaxial quantum dots
(2019-02-07)
Ramirez, Hanz Y.
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Chou, Ying-Lin
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Cheng, Shun-Jen
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電子物理學系
;
Department of Electrophysics
Entangled photon pair generation is a crucial task for development of quantum information based technologies, and production of entangled pairs by biexciton cascade decays in semiconductor quantum dots is so far one of the most advanced techniques to achieve it. However, its scalability toward massive implementation requires further understanding and better tuning mechanisms to suppress the fine structure splitting between polarized exciton states, which persists as a major obstacle for entanglement generation from most quantum dot samples. In this work, the influence of electrostatic environment arising from electrically biased electrodes and/or charged impurities on the fine structure splitting of GaAs/AlGaAs droplet epitaxial quantum dots is studied, by means of numerical simulations considering a realistic quantum dot confining potential and electron-hole exchange interaction within a multiband k.p framework. We find that reduction of the fine structure splitting can be substantially optimized by tilting the field and seeding impurities along the droplet elongation axis. Furthermore, our results provide evidence of how the presence of charged impurities and in-plane bias components, may account for different degrees of splitting manipulation in dots with similar shape, size and growth conditions.
Electrically sign-reversible transverse g-factors of holes in droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress
(2017-08-23)
Wu, Yu-Nien
;
Wu, Ming-Fan
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Ou, Ya-Wen
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Chou, Ying-Lin
;
Cheng, Shun-Jen
We present a theoretical investigation of anisotropic g-factor tensors of single holes confined in droplet epitaxial GaAs/AlGaAs quantum dots under electrical and mechanical controls using the gauge-invariant discretization method within the framework of four-band Luttinger-Kohn (k) over right arrow.(p) over right arrow theory. We reveal an intrinsic obstacle to realize the electrical sign reversal of the hole g-factors, being a key condition required for a full spin control in the scheme of g-tensor modulation, for the quantum dots solely with electrical bias control. Constructively, our studies show that, besides electrical gating, slightly stressing an inherently unstrained droplet epitaxial GaAs/AlGaAs quantum dot can offset the transverse hole g-factor to be nearly zero and make the electrical sign reversal of the hole g-factors feasible.
Electron-hole symmetry breakings in optical fine structures of single self-assembled quantum dots
(2010-02-01)
Ramirez, Hanz Y.
;
Lin, Chia-Hsien
;
You, Wen Ting
;
Huang, Shan-Yu
;
Chang, Wen-Hao
The effects of electron-hole (e-h) symmetry breaking on the optical fine structure splitting (FSS) of single excitons in individual InGaAs/GaAs self-assembled quantum dots are experimentally and theoretically studied. The measured FSSs of small InGaAs/GaAs self-assembled quantum dots show a monotonic decrease wills increasing emission energy and eventually almost vanish (<= 10 mu eV) in the high energy regime. A theory based on 3D asymmetric parabolic model for e-h exchange interaction in combination with 3D finite difference simulations for Ga-diffused InGaAs/GaAs QDs is developed to explore the underlying physics. The reduced FSSs in the high emission energy regime are shown closely related to the e-h wave function symmetry breaking which is especially significant in highly Ga-diffused quantum dots. The Ga-diffusion induced e-h asymmetry reduces the e-h wave function overlap and results in the feature of reduced fine energy splitting. (c) 2009 Elsevier Boy. All rights reserved.
Electron-hole symmetry breakings in optical fine structures of single self-assembled quantum dots (vol 42, pg 1155, 2010)
(2010-11-01)
Ramirez, Hanz Y.
;
Lin, Chia-Hsien
;
You, Wen Ting
;
Huang, Shan-Yu
;
Chang, Wen-Hao
Electron-hole symmetry breakings in optical fine structures of single self-assembled quantum dots (vol 42, pg 1155, 2010)
(2010-11-01)
Ramirez, Hanz Y.
;
Lin, Chia-Hsien
;
You, Wen Ting
;
Huang, Shan-Yu
;
Chang, Wen-Hao
Engineered spin-state transitions of two interacting electrons in semiconductor nanowire quantum dots
(2010-06-11)
Chen, Yan-Ting
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Cheng, Shun-Jen
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Tang, Chi-Shung
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電子物理學系
;
Department of Electrophysics
Spin properties of two interacting electrons in a quantum dot (QD) embedded in a nanowire with controlled aspect ratio and longitudinal magnetic fields are investigated by using a configuration-interaction (CI) method. The developed CI theory based on a three-dimensional parabolic model provides explicit formulations of the Coulomb matrix elements and allows for straightforward and efficient numerical implementation. Our studies reveal fruitful features of spin-singlet-triplet transitions of two electrons confined in a nanowire QD, as a consequence of the competing effects of geometry-controlled kinetic-energy quantization, Coulomb interaction, and spin-Zeeman energy. The developed theory is further employed to study various spin states of two quantum-confined electrons in the regime of "crossover" dimensionality, from quasi-two-dimensional (disklike) QDs to finite one-dimensional (rodlike) QDs.
Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules
(2009)
Lin, Hsuan
;
Wang, Sheng-Yun
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Lin, Chia-Hsien
;
Chang, Wen-Hao
;
Cheng, Shun-Jen
We present a spectroscopic study of single quantum-dot molecules (QDMs) formed by two closely stacked In(0.5)Ga(0.5)As/GaAs layers. It was found that the interdot coupling and directional energy transfer between the two adjacent dots can be controlled by temperature tuning. Direct and indirect excitons, as well as charged excitons in single QDMs were classified and identified by excitation-power dependent, excitation-energy dependent and polarization-resolved microphotoluminescence measurements. With the increasing temperature, the direct-exciton intensity decreases while the indirect-exciton intensity increases. A rate equation model considering phonon mediated processes has been developed. The directional energy transfer in QDMs is explained in terms of the phonon-assisted tunnelling of hole between the two adjacent dots. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Exposure of the Hidden Anti-ferromagnetism in Paramagnetic CdSe:Mn Nanocrystals
(2015-01-01)
Zou, Shou-Jyun
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Wang, Sheng-Tsung
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Wu, Ming-Fan
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Jian, Wen-Bin
;
Cheng, Shun-Jen
We present theoretical and experimental investigations of the magnetism of paramagnetic semiconductor CdSe:Mn nanocrystals and propose an efficient approach to the exposure and analysis of the underlying anti-ferromagnetic interactions between magnetic ions therein. A key advance made here is the development of an analysis method with the exploitation of group theory technique that allows us to distinguish the anti-ferromagnetic interactions between aggregative Mn2+ ions from the overall pronounced paramagnetism of magnetic-ion-doped semiconductor nanocrystals. By using the method, we clearly reveal and identify the signatures of anti-ferromagnetism from the measured temperature-dependent magnetisms and furthermore determine the average number of Mn2+ ions and the fraction of aggregative ones in the measured CdSe:Mn nanocrystals.
Finger-gate manipulated quantum transport in a semiconductor narrow constriction with spin-orbit interactions and Zeeman effect
(2012-09-24)
Tang, Chi-Shung
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Chang, Shu-Yu
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Cheng, Shun-Jen
;
電子物理學系
;
Department of Electrophysics
The authors investigate quantum transport in a narrow constriction fabricated by narrow-band-gap semiconductor materials with spin-orbit couplings. We consider the Rashba-Dresselhaus (RD) spin-orbit interactions (SOIs) and the Zeeman effect induced by an in-plane magnetic field along the transport direction. The interplay of the RD SOI and the Zeeman effect may induce a SOI-Zeeman gap and influence the transport properties. We demonstrate that an attractive scattering potential may induce an electronlike quasi-bound-state feature and manifest the RD-SOI-Zeeman induced Fano line shape in conductance. Furthermore, a repulsive scattering potential may induce a holelike quasi-bound-state feature on the subband top of the lower spin branch.
Finger-gate manipulated quantum transport in Dirac materials
(2015-05-27)
Kleftogiannis, Ioannis
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Tang, Chi-Shung
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Cheng, Shun-Jen
;
電子物理學系
;
Department of Electrophysics
We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch.
Geometrical impact on the optical polarization of droplet epitaxial quantum dots
(2012-09-17)
Liao, Yu-Huai
;
Liao, Chien-Chih
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Ku, Chih-Hao
;
Chang, Yu-Chen
;
Cheng, Shun-Jen
We report on experimental and theoretical investigations of the optical anisotropy of GaAs/AlGaAs quantum dots grown by droplet epitaxy. With in situ annealing in the growth, the shape of quantum dots is systematically controlled from a tall and laterally symmetric shape to a flat and laterally elongated one. Photoluminescence spectroscopy demonstrates an uncommon observation: the more elongated the quantum dots, the lower the degree of linear polarization. Theoretical analysis based on a four-band k center dot p theory reveals a substantial impact of vertical confinement on the valence heavy-hole and light-hole mixing, which leads to the enhancement of polarization anisotropy for taller quantum dots. The influence of Coulomb interactions on polarization anisotropy is studied by using the partial configuration interaction method, and is shown to reduce the polarization anisotropy through the mixing of single-particle configurations with different symmetries.
Highly Efficient Flexible Hybrid Nanocrystal-Cu(In,Ga)Se-2 (CIGS) Solar Cells
(2015-01-21)
Liao, Yu-Kuang
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Brossard, Mael
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Hsieh, Dan-Hua
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Lin, Tzu-Neng
;
Charlton, Martin D. B.
A novel scheme for hybridizing inkjet-printed thin film Cu(In,Ga)Se-2 (CIGS) solar cells with self-assembled clusters of nanocrystal quantum dots (NQDs), which provides a 10.9% relative enhancement of the photon conversion efficiency (PCE), is demonstrated. A non-uniform layer of NQD aggregates is deposited between the transparent conductive oxide and a CdS/CIGS p-n junction using low cost pulsed-spray deposition. Hybridization significantly improves the external quantum efficiency of the hybrid devices in the absorption range of the NQDs and in the red to near-IR parts of the spectrum. The low wavelength response enhancement is found to be induced by luminescent down-shifting (LDS) from the NQD layer, while the increase at longer wavelengths is attributed to internal scattering from NQD aggregates. LDS is demonstrated using time-resolved spectroscopy, and the morphology of the NQD layer is investigated in fluorescence microscopy and cross-sectional transmission electron microscopy. The influence of the NQD dose on the PCE of the hybrid devices is investigated and an optimum value is obtained. The low costs and limited material consumptions associated with pulsed-spray deposition make these flexible hybrid devices promising candidates to help push thin-film photovoltaic technology towards grid parity.