Browsing by Author "Cheng, Y. H."

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Investigation of Random Telegraph Noise Amplitudes in Hafnium Oxide Resistive Memory Devices
(2014-01-01)
Chung, Y. T.
;
Liu, Y. H.
;
Su, P. C.
;
Cheng, Y. H.
;
Wang, Tahui
Statistical characterization of two-level random telegraph noise (RTN) amplitude distribution in a hafnium oxide resistive memory has been performed. We find that two-level RTN in HRS exhibits a large amplitude distribution tail, as compared to LRS. To investigate an RTN trap position in a hafnium oxide film, we measure the dependence of electron capture and emission times of RTN on applied read voltage. A correlation between an RTN trap position and RTN amplitude is found. A quasi-two-dimensional RTN amplitude simulation based on trap-assisted electron sequential tunneling is developed. Our study shows that RTN traps in a rupture region of a hafnium oxide film are responsible for an RTN large-amplitude tail in HRS mostly.