Browsing by Author "Cheng, YF"

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Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface
(1999-11-01)
Liu, PT
;
Chang, TC
;
Yang, YL
;
Cheng, YF
;
Shih, FY
The interaction between copper and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and hydrogen plasma posttreatment. Owing to serious diffusion of copper atoms in HSQ film, degradation of the dielectric properties are significant with the increase of thermal stress. By applying hydrogen plasma treatment to the HSQ film, however, the phenomena of serious Cu penetration were not observed by electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis even in the absence of diffusion barrier layers. Therefore, hydrogen plasma treatment can effectively block the diffusion of copper in low-k HSQ film.
Effects of NH3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects
(2000-09-01)
Liu, PT
;
Chang, TC
;
Yang, YL
;
Cheng, YF
;
Sze, SM
The interaction between topper interconnects and low-k hydrogen silsesquioxane! (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and NH3 plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, degradations of the dielectric properties are significant with the increase of thermal stress, The leakage current behavior in high field conduction is well explained by the Poole-Frenkel (P-F) mechanism. By applying NH3-plasma treatment to the HSQ film, however, the leakage current is decreased and P-F conduction can be significantly suppressed. In addition, the phenomenon of serious Cu penetration is not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis even in the absence of diffusion barrier layers. This indicates the copper diffusion in low-k HSQ film can be effectively blocked by NH3 plasma post-treatment.
High-performance integration of copper interconnects with low-k hydrogen silsesquioxane employing deuterium plasma treatment
(2000)
Liu, PT
;
Chang, TC
;
Yang, YL
;
Cheng, YF
;
Lee, JK
The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and deuterium plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, the degradations of dielectric properties are significant with the increase of thermal stress. By applying deuterium plasma treatment to HSQ film, however, this degradation was alleviated. In addition, the phenomena of serious Cu penetration were not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis, even in the absence of diffusion barrier layers. This indicates that copper diffusion in low-k HSQ film can be effectively blocked by deuterium plasma post-treatment. Therefore, further improvement in RC reduction can be obtained due to the minimized thickness requirement for conventional barriers such as inorganic Si3N4 and metallic TaN layers.
Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment
(2000-03-01)
Liu, PT
;
Chang, TC
;
Yang, YL
;
Cheng, YF
;
Lee, JK
The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and deuterium plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, the degradations of dielectric properties are significant with the increase of thermal stress. The leakage current behavior In high-field conduction was well explained by the Poole-Frenkel (P-F) mechanism. By applying deuterium plasma treatment to HSQ film, however, the leakage current was decreased and P-F conduction can be suppressed. In addition, the phenomena of serious Cu penetration were not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy analysis, even in the absence of diffusion barrier layers. This indicates that copper diffusion in low-k HSQ film can be effectively blocked by deuterium plasma post-treatment. Therefore, further improvement in resistance-capacitance reduction can be obtained due to the minimized thickness requirement for conventional barriers such as inorganic Si3N4 and metallic TaN layers. (C) 2000 The Electrochemical Society S0013-4651(99)08-022-2. All rights reserved.