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Browsing by Author "Cheng-Shih, Lee"

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    Schottky structure in GaAs semiconductor device
    (2004-01-29)
    Cheng-Shih, Lee
    ;
    Yi, Chang
    The present invention provides a Schottky Structure in gallium arsenide (GaAs) semiconductor device, which comprises a gallium arsenide (GaAs) semiconductor substrate, a titanium (Ti) layer on a surface of said gallium arsenide (GaAs) semiconductor substrate to form Schottky contact, a diffusion barrier layer on a surface of said titanium (Ti) layer to block metal diffusion, and a first copper layer on a surface of said diffusion barrier layer.