Browsing by Author "Cheung, NW"

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Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFT's
(1998-11-01)
Yeh, CF
;
Chen, TJ
;
Liu, C
;
Shao, JQ
;
Cheung, NW
This work applied, for the first time, plasma immersion ion implantation (PIII) for source/drain doping on low-temperature processed polysilicon thin-film transistors (poly-Si TFT's), Experimental results indicate that PIII doping can provide adequate dopant concentration and junction depth for source/drain. In addition, H-2-diluted phosphorus pill can promote dopant activation more efficiently during RTA at 600 degrees C than with conventional ion implantation (II) technology. The excellent characteristics of PIII doped poly-Si TFT's resemble those of conventional II doped ones.