Browsing by Author "Chi, Chia-Wei"

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The Effect of Different Carrier Gases and Channel Thicknesses on the Characteristics of ZnO TFTs Prepared by Atmospheric Pressure Plasma Jet
(2011)
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Chi, Chia-Wei
;
Wu, Chin-Jyi
;
Lin, Je-Wei
Thin film transistors (TFTs) with a ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ) were demonstrated. ZnO channel layers were fabricated with a non-vacuum and low-temperature process (100 degrees C). The effects of different carrier gases (nitrogen gas and compressed dry air) and channel thickness on the characteristics of ZnO TFTs were investigated. Reactive oxygen species can effectively repair the oxygen vacancies result in a low leakage current. By reducing the channel thickness, the undesired source to drain current flow can be eliminated. By using CDA as a carrier gas and reducing the channel thickness, a subthreshold swing of 3.75 V/decade, a field-effect mobility of 3.49 cm(2)/Vs and a Ion/Ioff current ratio of 4.08x10(7) were obtained.
The effect of oxygen species on the ZnO TFT prepared by atmosphere pressure plasma jet
(2012)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Deng, I-Chung
;
Chi, Chia-Wei
Bottom-gate thin-film transistors (TFTs) were fabricated with ZnO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of oxygen partial pressure on the ZnO TFT was investigated. The ZnO thin films were deposited at 100 degrees C, and oxygen gas was incorporated into plasma gas (N-2) in the percentage of 0%-1% (O-2/N-2+O-2). Reactive oxygen species could repair the oxygen vacancies during deposition, and the switching behavior was improved effectively. With increasing oxygen partial pressure, the ZnO thin films exhibited a more random orientation. By incorporating 0.69% O-2 into plasma gas, a threshold voltage of 26.7 V, a subthreshold swing of 3.89 V/decade, a field-effect mobility of 2.38 cm(2)/Vs and an I-on/I-off current ratio of 4.63x10(9) were obtained.
Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet
(2011-05-31)
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Wu, Chin-Jyi
;
Lin, Wei-Li
;
Chen, Wei-Chiang
Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 x 10(-3) Omega cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 degrees C in open air, and average transmittance in the visible region was more than 80%. (C) 2011 Elsevier B.V. All rights reserved.