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Browsing by Author "Chi, Jim Yung"

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    Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers
    (2007-10-01)
    Yang, Hung-Pin D.
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    Hsu, I-Chen
    ;
    Lai, Fang-I
    ;
    Lin, Gray
    ;
    Hsiao, Ru-Shang
    A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.