Browsing by Author "Chi, Ting-Yang"

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Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
(2017-09-01)
Wu, Cheng-Hsien
;
Pan, Chih-Hung
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current-voltage (I-V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon. (C) 2017 The Japan Society of Applied Physics