Browsing by Author "Chi-Wen LIU"
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Item type:Item, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE(2018-03-01) ;Chao-Hsin CHIEN ;Chi-Wen LIU ;Chung-Chun HSUWei-Chun CHIA method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy comprising components of the first metal layer, second metal layer, and the semiconductor substrate.Item type:Item, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF(2017-09-28) ;Chao-Hsin CHIEN ;Chi-Wen LIUChen-Han CHOUA semiconductor device including a Fin FET device includes a fin structure extending in a first direction and protruding from a substrate layer. The fin structure includes a bulk stressor layer formed on the substrate layer and a channel layer disposed over the bulk stressor layer. An oxide layer is formed on the substrate layer extending away from the channel layer. A source-drain (SD) stressor structure is disposed on sidewalls of the channel layer over the oxide layer. A gate stack including a gate electrode layer and a gate dielectric layer covers a portion of the channel layer and extends in a second direction perpendicular to the first direction.