Browsing by Author "Chiang, Chung-Hua"
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Item type:Item, Parallel 2D Axisymmetric Fluid Modeling of CF4 Discharge in an Inductively Coupled Plasma Source During SiO2 Etching(2014-04-01) ;Chiu, Yuan-Ming ;Chiang, Chung-Hua ;Hung, Chieh-Tsan ;Hu, Meng-HuaWu, Jong-ShinnA parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas-phase and 27 surface reactions with site-balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiFx and O-2, are found to be appreciable (approximate to 10%) compared to the precursor near the substrate. The predicted density trends, such as CFx+ and CFx (x=1-3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO2 substrate is presented and discussed in detail.