Browsing by Author "Chiang, Ko-Yu"

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A New Pixel Circuit for Driving Organic Light-Emitting Diode With Low Temperature Polycrystalline Silicon Thin-Film Transistors
(2005-09-01)
Tai, Ya-Hsiang
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Chen, Bo-Ting
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Kuo, Yu-Ju
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Tsai, Chun-Chien
;
Chiang, Ko-Yu
A new pixel circuit design for active matrix organic light-emitting diode (AMOLED), based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) is proposed and verified by SPICE simulation. Threshold voltage compensation pixel circuit consisting of four n-type TFTs, one p-type TFT, one additional control signal, and one storage capacitor is used to enhance display image quality. The simulation results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
Layout dependence on threshold voltage instability of hydrogenated amorphous silicon thin film transistors
(2007-03-01)
Tseng, Huai-Yuan
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Chiang, Ko-Yu
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Lu, Hau-Yan
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Kung, Chen-Pang
;
Chang, Ting-Chang
In this paper, we discuss the threshold voltage instability of two distinct layouts of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs). By simultaneously applying gate and drain bias stress, we show that the average threshold voltage shift of circular a-Si:H TFTs is 54% less than that of conventional inverted staggered a-Si:H TFTs. This result is primarily due to that the circular layout reduces the channel electron concentration. ISE-DESSIS (Integrated System Engineering DEvice Simulation for Smart Integrated Systems) was used to simulate the parallel electric field and obtain the total channel electron concentration. The simulation results closely correspond to the explanation in this study. These results indicate a significant impact of improving threshold voltage stability by a layout method.
New pixel circuits for driving organic light emitting diodes with low temperature polycrystalline Si thin film transistors
(2005)
Cheng, Huang-Chung
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Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
Two new pixel circuits for active matrix organic light emitting diode (AM-OLED), based on the low-temperature polycrystalline Si thin-film transistors (LTPS-TFTs) are proposed and the Vth compensation ability is verified by SPICE simulation and measured results. The voltage-programming pixel circuits are formed by five TFTs, one additional control signal, and one storage capacitor. The simulation and measured results show that the pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization
(2007-11-12)
Tsai, Chun-Chien
;
Lee, Yao-Jen
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Chiang, Ko-Yu
;
Wang, Jyh-Liang
;
Lee, I-Che
In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-mu m-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308 cm(2)/V s as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices. (c) 2007 American Institute of Physics.