Browsing by Author "Chiang, MC"

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Characteristics of novel polysilicon oxide by anodic oxidation
(1999-09-01)
Yeh, CF
;
Liu, JS
;
Chiang, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
For nonvolatile memory applications, a novel oxide grown on polysilicon by anodic oxidation (anodic polyoxide) is first investigated. In this work, the electrical characteristics of anodic polyoxide is discussed and compared with the conventional thermal polyoxide. The results show that the anodic polyoxide exhibits considerably excellent characteristics, i.e., low leakage current, high breakdown electric field, and high reliabilities.
Level shifters for high-speed 1-v to 3.3-v interfaces in a 0.13-mu m Cu-Interconnection/Low-k CMOS technology
(2001)
Wang, WT
;
Ker, MD
;
Chiang, MC
;
Chen, CH
;
電子工程學系及電子研究所
Level shifters for 1.0-V to 3.3-V high-speed interfaces are proposed. Level-up shifter uses zero-Vt 3.3-V NMOSs as voltage clamps to protect 1.0-V NMOS switches from high voltage stress across the gate oxide. Level-down shifter uses 3.3-V NMOSs as both pull-up and pull-down devices with supply voltage of 1.0-V and gate voltage swing from 0-V to 3.3-V. The zero-Vt NMOS is a standard MOSFET device in a 0.13-mum CMOS process without adding extra mask or process step to realize it. Level-up transition from 0.9-V to 3.6-V takes only 1 ns in time, and the level-down transition has no minimum core voltage limitation. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.