Browsing by Author "Chiang, MH"

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A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
(2003-01-20)
Meng, CC
;
Chiang, MH
;
Wu, TH
;
電信工程研究所
;
Institute of Communications Engineering
A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc.
DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology
(2003-04-17)
Meng, CC
;
Lu, SS
;
Chiang, MH
;
Chen, HC
;
電信工程研究所
A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with I I dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB = -17 dBm and IIP3 = -7 dBm are achieved for a small local oscillator power of -2 dBm when LO = 5.35 GHz and PF = 5.7 GHz.
Fabrication of intermediate mask for deep x-ray lithography
(1998-02-01)
Sheu, JT
;
Chiang, MH
;
Su, S
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents the fabrication of intermediate x-ray mask for deep x-ray lithography. In order to have working mask with absorbers thickness larger than 10 mu m, the intermediate mask should have absorbers of 0.7 mu m in thickness. To demonstrate intermediate mask fabrication, x-ray zone plates are fabricated on the 1.2 mu m low-stress silicon-rich silicon nitride (SiNx) membrane with the tri-layer Chromium-Tungsten-Chromium (Cr-W-Cr) as the x-ray absorbers. The chromium layers both 200 angstroms are used as adhesion and for stress relief. The SiNx film is deposited with low pressure chemical vapor deposition (LPCVD) and the free standing membrane are formed by KOH silicon backside etching. With the e-beam Lithography and reactive ion etching, width of 0.8 mu m of outmost zone of the x-ray zone plates has been achieved on the membrane, The scanning electron microscopy (SEM) images of the x-ray zone plates and pictures of intermediate masks are demonstrated.