Browsing by Author "Chiang, Michael Y."

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Formation and Structural Characterization of Cobalt Titanate Thin Films
(2010-10-01)
Chuang, Shiow-Huey
;
Gao, Reui-Hong
;
Gao, Kuo-Hsing
;
Chiang, Michael Y.
;
Chao, Tien-Sheng
This research successfully produces high quality cobalt titanate (CoTiO(3)) thin films, a high-k material for gate dielectrics, on SiO(2)/Si(100) substrates via a spin-coating method with a sol-like precursor solution. This study prepares the precursor solution by reactions of cobalt acetate and titanium isopropoxide in 2-methoxyethanol. The current work obtains CoTiO(3) thin films after spin coating followed by post-treatment with air under 550 similar to 650 degrees C. A scanning electron microscope, determines film thickness and morphology and X-ray diffraction identifies material structures. This study uses X-ray photoelectron spectroscopy to analyze both elemental compositions and chemical bonding characters of the thin films. This work also investigates reaction pathways.
X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO(3) high-k dielectric prepared by sol-gel spin coating method
(2008-09-01)
Kao, Kuo-Hsing
;
Chuang, Shiow-Huey
;
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Chen, Jian-Hao
The characteristics of CoTiO(3) high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k similar to 40.2) of CoTiO(3) dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO(2) and spin-on CoTiO(3) was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO(2) and spin-on CoTiO(3) were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO(3) directly with SiO(2) and indirectly with Si was determined in this work. (c) 2008 American Institute of Physics.
X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method
(2008-09-01)
Kao, Kuo-Hsing
;
Chuang, Shiow-Huey
;
Wu, Woei-Cherng
;
Chao, Tien-Sheng
;
Chen, Jian-Hao
The characteristics of CoTiO3 high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k similar to 40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work. (c) 2008 American Institute of Physics.