Browsing by Author "Chiang, TC"

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Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition
(1997-05-01)
Lin, DS
;
Miller, T
;
Chiang, TC
;
物理研究所
;
Institute of Physics
Si and Ge films can be prepared under ultrahigh vacuum conditions by chemical vapor deposition using disilane and digermane as source gases. These gases offer a high sticking probability, and are suitable for atomic layer epitaxy. Using synchrotron radiation photoemission spectroscopy and scanning tunneling microscopy, we have examined the surface processes associated with the heteroepitaxial growth of Ge/Si. The measured surface-induced shifts and chemical shifts of the Si 2p and Ge 3d core levels allow us to identify the surface species and to determine the surface chemical composition, and this information is correlated with the atomic features observed by scanning tunneling microscopy. Issues related to precursor dissociation, attachment to dangling bonds, diffusion, surface segregation, growth morphology, and pyrolytic reaction pathways will be discussed. (C) 1997 American Vacuum Society.
Atomistic view of the recombinative desorption of H(2) from H/Si(100)
(2005-05-20)
Ferng, SS
;
Lin, CT
;
Yang, KM
;
Lin, DS
;
Chiang, TC
Scanning tunneling microscopy is employed to investigate the recombinative desorption of H(2) from hydrogenated Si(100) surfaces consisting of dihydride (SiH(2)) and monohydride (SiH) surface species organized in (1x1), (3x1), and (2x1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3x1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.
Atomistic view of the recombinative desorption of H-2 from H/Si(100)
(2005-05-20)
Ferng, SS
;
Lin, CT
;
Yang, KM
;
Lin, DS
;
Chiang, TC
Scanning tunneling microscopy is employed to investigate the recombinative desorption of H-2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1x1), (3x1), and (2x1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3x1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.
Atomistics of Ge deposition on Si(100) by atomic layer epitaxy
(2003-01-31)
Lin, DS
;
Wu, JL
;
Pan, SY
;
Chiang, TC
;
物理研究所
Chlorine termination of mixed Ge/Si(100) surfaces substantially enhances the contrast between Ge and Si sites in scanning tunneling microscopy observations. This finding enables a detailed investigation of the spatial distribution of Ge atoms deposited on Si(100) by atomic layer epitaxy. The results are corroborated by photoemission measurements aided by an unusually large chemical shift between Cl adsorbed on Si and Ge. Adsorbate-substrate atomic exchange during growth is shown to be important. The resulting interface is thus graded, but characterized by a very short length scale of about one monolayer.
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(2006-05-26)
Lin, DS
;
Chiang, TC
;
物理研究所
;
Institute of Physics