Browsing by Author "Chiang, WJ"

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Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
(2004-02-01)
Lee, DY
;
Huang, TY
;
Lin, HC
;
Chiang, WJ
;
Huang, GW
The effects of poly-Si gate doping type and species as well as thermal treatments on negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated. We found that devices with n(+)-poly-Si gate depict a smaller threshold voltage shift after bias-temperature stressing, compared to their p(+)-poly-Si-gated counterparts. By carefully controlling the thermal budget to suppress boron penetration, NBTI can be reduced by fluorine incorporation in p(+)-poly-Si-gated devices. Finally, NBTI is found to be aggravated in devices subjected to H-2 postmetal-annealing, highlighting the important role of hydrogen bonds. (C) 2004 The Electrochemical Society.
Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs
(2002)
Lee, DY
;
Lin, HC
;
Chiang, WJ
;
Lu, WT
;
Huang, GW
The effects of poly-Si gate doping type and species on the negative-bias-temperature instability (NBTI) of p-channel MOS transistors were investigated. We found that, by properly suppressing boron penetration through careful thermal budget, NBTI can be reduced by proper fluorine incorporation. In addition, we found that NBTI is larger for devices with PMA annealing, thus clearly identified the role of hydrogen passivation in NBTI.