Browsing by Author "Chiang, Wei-Han"

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Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD Al2O3 Gate Dielectric
(2012-04-01)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Deng, I-Chung
;
Wu, Chin-Jyi
This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V-T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm(2)/(V . s), and a large I-on/I-off ratio of 1 x 10(8).
The effect of thermal annealing on the properties of IGZO TFT prepared by atmospheric pressure plasma jet
(2012)
Wu, Chien-Hung
;
Chang, Kow-Ming
;
Huang, Sung-Hung
;
Deng, I-Chung
;
Wu, Chin-Jyi
We fabricated bottom gate TFTs with IGZO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of thermal annealing on the properties of IGZO TFTs was studied. After post annealing, the IGZO thin films showed a smooth and dense structure. The transistors annealed at 300 degrees C showed clear switching behavior with a negative threshold voltage of -0.571 V and a mobility of 2.6 cm(2)/V-s. After 500 degrees C post annealing, IGZO thin film showed an amorphous-like phase and the average transmittance is more than 80% in the visible range. Good electrical characteristics were achieved, including a threshold voltage of 6.74V, a subthreshold swing of 1.54 V/dec, a mobility of 10.31 cm(2)/V-s and a large I-on/I-off ratio of 3.28x10(8).