Browsing by Author "Chin, Ping-Chieh"

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Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications
(2015-10-01)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Liao, Jen-Ting
;
Lan, Wei-Cheng
;
Chin, Ping-Chieh
We demonstrate an Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (MIS-HEMT) device with stable electrical properties under high-voltage stress, by using an Al2O3/AlN stack layer as the gate dielectric layer. Excellent quality AlN/Al2O3 GaN interface was obtained by using plasma-enhanced ALD (PE-ALD), resulting in a very low interface trap density (D-it) of similar to 1.8 x 10(11) eV(-1) cm(-2), obtained by using the conductance method. The device exhibits a small threshold voltage hysteresis of similar to 200 mV and a lower gate-source leakage current. No obvious changes in the drain-source current and ON-resistance were observed for the device that was subject to the drain-source voltage stress of 100 V for 15 h. (C) 2015 The Japan Society of Applied Physics
GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications
(2015-12-01)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Li, Fang-Ming
;
Shi, Wang-Cheng
;
Huang, Yu-Xiang
A GaN high-electron-mobility transistor (HEMT) with WN (x) /Cu gate for high-power applications has been investigated. The direct-current (DC) characteristics of the device are comparable to those of conventional Ni/Au-gated GaN HEMTs. The results of high-voltage stress testing indicate that the device is stable after application of 200 V stress for 42 h. The WN (x) /Cu-gated GaN HEMT exhibited no obvious changes in the DC characteristics or Schottky barrier height before and after annealing at 250A degrees C for 1 h. These results demonstrate that the WN (x) /Cu gate structure can be used in a GaN HEMT for high-power applications with good thermal stability.
Reliability improvement in GaN HEMT power device using a field plate approach
(2017-07-01)
Wu, Wen-Hao
;
Lin, Yueh-Chin
;
Chin, Ping-Chieh
;
Hsu, Chia-Chieh
;
Lee, Jin-Hwa
This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach. (C) 2017 Elsevier Ltd. All rights reserved.