Browsing by Author "Chin Albert"

Now showing 1 - 6 of 6

CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME
(2012-05-10)
Chin Albert
The present invention related to a method for forming a capacitor device, comprising steps of: providing a substrate, forming a first metal layer on the substrate, forming a dielectric on the first metal layer, applying a laser-annealing to the dielectric, and forming a second metal layer on the dielectric.
FLASH MEMORY
(2013-06-06)
Chin Albert
;
Tsai Chun-Yang
A MONOS Charge-Trapping flash (CTF), with record thinnest 3.6 nm ENT trapping layer, has a large 3.1V 10-year extrapolated retention window at 125° C. and excellent 106 endurance at a fast 100 is and ±16 V program/erase. This is achieved using As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125° C. A MoN—[SiO2—LaAlO3]—[Ge—HfON]—[LaAlO3—SiO2]—Si CTF device is also provided with record-thinnest 2.5-nm Equivalent-Si3N4-Thickness (ENT) trapping layer, large 4.4 V initial memory window, 3.2 V 10-year extrapolated retention window at 125° C., and 3.6 V endurance window at 106 cycles, under very fast 100 μs and low ±16 V program/erase. These were achieved using Ge reaction with HfON trapping layer for better charge-trapping and retention.
Flash memory
(2014-09-16)
Chin Albert
;
Tsai Chun-Yang
A MONOS Charge-Trapping flash (CTF), with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125° C. and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125° C. A MoN—[SiO2—LaAlO3]—[Ge—HfON]—[LaAlO3—SiO2]—Si CTF device is also provided with record-thinnest 2.5-nm Equivalent-Si3N4-Thickness (ENT) trapping layer, large 4.4 V initial memory window, 3.2 V 10-year extrapolated retention window at 125° C., and 3.6 V endurance window at 106 cycles, under very fast 100 μs and low ±16 V program/erase. These were achieved using Ge reaction with HfON trapping layer for better charge-trapping and retention.
FLASH MEMORY
(2014-11-27)
Chin Albert
;
Tsai Chun-Yang
A MONOS Charge-Trapping flash (CTF), with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125° C. and excellent 106 endurance at a fast 100 μs and ±16 V program/erase. This is achieved using As+-implanted higher κ trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125° C. A MoN—[SiO2—LaAlO3]—[Ge—HfON]—[LaAlO3—SiO2]—Si CTF device is also provided with record-thinnest 2.5-nm Equivalent-Si3N4-Thickness (ENT) trapping layer, large 4.4 V initial memory window, 3.2 V 10-year extrapolated retention window at 125° C., and 3.6 V endurance window at 106 cycles, under very fast 100 μs and low ±16 V program/erase. These were achieved using Ge reaction with HfON trapping layer for better charge-trapping and retention.
RESISTIVE RANDOM ACCESS MEMORY (RRAM) USING STACKED DIELECTRICS AND METHOD FOR MANUFACTURING THE SAME
(2013-05-23)
Chin Albert
;
Cheng Chun-Hu
Resistive random access memory (RRAM) using stacked dielectrics and a method for manufacturing the same are disclosed, where a setting power of only 4 μW, an ultra-low reset power of 2 nW, good switching uniformity and excellent cycling endurance up to 5×109 cycles were achieved simultaneously. Such record high performances were reached in a Ni/GeOx/nano-crystal-TiO2/TaON/TaN RRAM device, where the excellent endurance is 4˜6 orders of magnitude larger than existing Flash memory. The very long endurance and low switching energy RRAM is not only satisfactory for portable SSD in a computer, but may also create new applications such as being used for a Data Center to replace high power consumption hard discs.
Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same
(2014-07-29)
Chin Albert
;
Cheng Chun-Hu
Resistive random access memory (RRAM) using stacked dielectrics and a method for manufacturing the same are disclosed, where a setting power of only 4 μW, an ultra-low reset power of 2 nW, good switching uniformity and excellent cycling endurance up to 5×109 cycles were achieved simultaneously. Such record high performances were reached in a Ni/GeOx/nano-crystal-TiO2/TaON/TaN RRAM device, where the excellent endurance is 4˜6 orders of magnitude larger than existing Flash memory. The very long endurance and low switching energy RRAM is not only satisfactory for portable SSD in a computer, but may also create new applications such as being used for a Data Center to replace high power consumption hard discs.