Browsing by Author "Chiou, Chien-Jyun"

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Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions
(2015-06-01)
Chou, Yi-Chia
;
Tang, Wei
;
Chiou, Chien-Jyun
;
Chen, Kai
;
Minor, Andrew M.
Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.
Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts
(2015-01-01)
Chiou, Chien-Jyun
;
Chiu, Shao-Pin
;
Lin, Juhn-Jong
;
Chou, Yi-Chia
;
電子物理學系
We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moire fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts.
Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon
(2017-01)
Chiu, Shao-Pin
;
Yeh, Sheng-Shiuan
;
Chiou, Chien-Jyun
;
Chou, Yi-Chia
;
Lin, Juhn-Jong
High-precision resistance noise measurements indicate that the epitaxial CoSi2/Si heterostructures at 150 and 2 K (slightly above its superconducting transition temperature T-c of 1.54 K) exhibit an unusually low 1/f noise level in the frequency range of 0.008-0.2 Hz. This corresponds to an upper limit of Hooge constant gamma <= 3 X 10(-6), about 100 times lower than that of single-crystalline aluminum films on SiO2 capped Si substrates. Supported by high -resolution cross-sectional transmission electron microscopy studies, our analysis reveals that the 1/f noise is dominated by excess interfacial Si atoms and their dimer reconstruction induced fluctuators. Unbonded orbitals (i.e., dangling bonds) on excess Si atoms are intrinsically rare at the epitaxial CoSi2/Si(100) interface, giving limited trapping-detrapping centers for localized charges. With its excellent normal-state properties, CoSi2 has been used in silicon-based integrated circuits for decades. The intrinsically low noise properties discovered in this work could be utilized for developing quiet qubits and scalable superconducting circuits for future quantum computing.
Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon
(2017-01)
Chiu, Shao-Pin
;
Yeh, Sheng-Shiuan
;
Chiou, Chien-Jyun
;
Chou, Yi-Chia
;
Lin, Juhn-Jong
High-precision resistance noise measurements indicate that the epitaxial CoSi2/Si heterostructures at 150 and 2 K (slightly above its superconducting transition temperature T-c of 1.54 K) exhibit an unusually low 1/f noise level in the frequency range of 0.008-0.2 Hz. This corresponds to an upper limit of Hooge constant gamma <= 3 X 10(-6), about 100 times lower than that of single-crystalline aluminum films on SiO2 capped Si substrates. Supported by high -resolution cross-sectional transmission electron microscopy studies, our analysis reveals that the 1/f noise is dominated by excess interfacial Si atoms and their dimer reconstruction induced fluctuators. Unbonded orbitals (i.e., dangling bonds) on excess Si atoms are intrinsically rare at the epitaxial CoSi2/Si(100) interface, giving limited trapping-detrapping centers for localized charges. With its excellent normal-state properties, CoSi2 has been used in silicon-based integrated circuits for decades. The intrinsically low noise properties discovered in this work could be utilized for developing quiet qubits and scalable superconducting circuits for future quantum computing.